STPS30SM80C Power Schottky rectifier Datasheet - production data Description A1 K A2 This dual diode Schottky rectifier is suited for high frequency switch mode power supply. Packaged in TO-220FPAB, this device is particularly suited for use in notebook, game station, LCD TV and desktop adapters, providing these applications with a good efficiency at both A2 low and high load. K A1 Table 1: Device summary Symbol Value TO-220FPAB I 2 x 15 A F(AV) VRRM 80 V T(max.) 175 C j Features VF(typ.) 515 mV High junction temperature capability Optimized trade-off between leakage current and forward voltage drop Figure 1: Electrical characteristics Low leakage current Avalanche capability specified Insulated package TO-220FPAB Insulated voltage: 2000 V sine RMS VARM and IARM must respect the reverse safe operating area defined in Figure 9. V and AR IAR are pulse measurements (tp < 1 s). VR, I , V and V , are static characteristics. R RRM F May 2017 DocID018727 Rev 2 1/9 www.st.com This is information on a product in full production. Characteristics STPS30SM80C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 80 V I Forward rms current 30 A F(RMS) T = 105 C Per diode 15 C Average forward current IF(AV) A = 0.5, square wave T = 70 C Per device 30 C Surge non repetitive IFSM tp = 10 ms sinusoidal 220 A forward current Repetitive peak avalanche (1) P t = 10 s, T = 125 C 545 W ARM p j power Maximum repetitive peak (2) VARM tp < 1 s, Tj < 150 C, IAR < 22.8 A 100 V avalanche voltage Maximum single pulse (2) V t < 1 s, T < 150 C, I < 22.8 A 100 V ASM p j AR peak avalanche voltage T Storage temperature range -65 to +175 C stg (3) Tj Maximum operating junction temperature 175 C Notes: (1) For pulse time duration deratings, please refer to figure 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. (2) See Figure 9 (3) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameters Symbol Parameter Max. value Unit Per diode 5.30 Junction to case Rth(j-c) C/W Total 4.20 R Coupling 3.10 C/W th(c) When the diodes 1 and 2 are used simultaneously: Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) 2/9 DocID018727 Rev 2