Product Information

STPS3L25S

STPS3L25S electronic component of STMicroelectronics

Datasheet
Schottky Diodes & Rectifiers 3.0 Amp 25 Volt

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Warehouse 1

MOQ : 2500
Multiples : 2500

Stock Image

STPS3L25S
STMicroelectronics

2500 : USD 0.7
N/A

Obsolete
0 - Warehouse 2

MOQ : 1
Multiples : 1

Stock Image

STPS3L25S
STMicroelectronics

1 : USD 0.5897
10 : USD 0.49
100 : USD 0.316
1000 : USD 0.2529
2500 : USD 0.2364
10000 : USD 0.2364
25000 : USD 0.2276
50000 : USD 0.2243
100000 : USD 0.2188
N/A

Obsolete
0 - Warehouse 3

MOQ : 160
Multiples : 1

Stock Image

STPS3L25S
STMicroelectronics

160 : USD 0.4004
250 : USD 0.3963
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STPS3L25S LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I 3A F(AV) V 25 V RRM Tj (max) 150C V (max) 0.44 V F FEATURES AND BENEFITS n VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION SMC n OPTIMIZED CONDUCTION/REVERSE LOSSES JEDEC DO-214AB TRADE-OFF WHICH MEANS THE HIGHEST EFFICIENCY IN THE APPLICATIONS n HIGH POWER SURFACE MOUNT MINIATURE PACKAGE n AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC con- verters. Packaged in SMC, this device is especially in- tended for use as an antiparallel diode on synchro- nous rectification freewheel MOSFETs at the secondary of 3.3V SMPS and DC/DC units. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 25 V RRM I RMS forward current 10 A F(RMS) I Average forward current T = 115C = 0.5 3 A F(AV) L I Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A FSM I Repetitive peak reverse current tp= 2 s square F=1kHz 1 A RRM I Non repetitive peak reverse current tp = 100 s square 1 A RSM T Storage temperature range - 65 to + 150 C stg P Repetitive peak avalanche power tp = 1s Tj = 25C 1500 W ARM Tj Maximum operating junction temperature * 150 C dV/dt Critical rate of rise of reverse voltage 10000 V/s dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed: 4A 1/4STPS3L25S THERMAL RESISTANCES Symbol Parameter Value Unit R Junction to lead 20 C/W th(j-l) STATIC ELECTRICAL CHARACTERISTICS Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit I * Reverse leakage current Tj = 25CV =V 90 A R R RRM Tj = 125C1530mA V * Forward voltage drop Tj = 25CI = 3 A 0.49 V F F Tj = 125C 0.37 0.44 Tj=25CI = 6 A 0.6 F Tj = 125C 0.5 0.58 Pulse test: * tp = 380 s, <2% To evaluate the maximum conduction losses use the following equation : 2 P=0.3 xI + 0.047 I F(AV) F (RMS) Fig. 1: Average forward power dissipation versus Fig. 2: Average forward current versus ambient average forward current. temperature (=0.5). PF(av)(W) IF(av)(A) 3.5 2.2 = 0.1 = 0.2 Rth(j-a)=Rth(j-l) = 0.5 2.0 = 0.05 3.0 1.8 2.5 1.6 = 1 1.4 2.0 1.2 Rth(j-a)=90C/W 1.0 1.5 0.8 1.0 T T 0.6 0.4 0.5 =tp/T tp tp Tamb(C) 0.2 =tp/T IF(av) (A) 0.0 0.0 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2/5

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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