X-On Electronics has gained recognition as a prominent supplier of STPS8H100D Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS8H100D Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPS8H100D STMicroelectronics

STPS8H100D electronic component of STMicroelectronics
STPS8H100D STMicroelectronics
STPS8H100D Schottky Diodes & Rectifiers
STPS8H100D  Semiconductors

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See Product Specifications
Part No. STPS8H100D
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Diode: Schottky rectifying; THT; 100V; 8A; TO220AC; Package: tube
Datasheet: STPS8H100D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.315 ea
Line Total: USD 315 
Availability - 5820
Ship by Wed. 25 Jun to Tue. 01 Jul
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
5965
Ship by Wed. 25 Jun to Tue. 01 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 0.315
2000 : USD 0.3709
5000 : USD 0.3668

725
Ship by Wed. 25 Jun to Tue. 01 Jul
MOQ : 650
Multiples : 1
650 : USD 0.4095
1000 : USD 0.3965
3000 : USD 0.3687

194
Ship by Wed. 02 Jul to Mon. 07 Jul
MOQ : 1
Multiples : 1
1 : USD 1.2576
10 : USD 1.026
50 : USD 0.6144
100 : USD 0.5362
500 : USD 0.4896
1000 : USD 0.4653
2000 : USD 0.4598

435
Ship by Mon. 23 Jun to Wed. 25 Jun
MOQ : 1
Multiples : 1
1 : USD 1.176
10 : USD 0.8666
29 : USD 0.665
79 : USD 0.6286
500 : USD 0.6244
1000 : USD 0.6062

171619
Ship by Wed. 25 Jun to Tue. 01 Jul
MOQ : 266
Multiples : 1
266 : USD 0.9785
463 : USD 0.5618
488 : USD 0.5331
557 : USD 0.4673
1000 : USD 0.3789
5000 : USD 0.3602

5820
Ship by Wed. 25 Jun to Tue. 01 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 0.315
2000 : USD 0.3709
5000 : USD 0.3668

   
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Mounting
Kind Of Package
Semiconductor Structure
Type Of Diode
Max Load Current
Max Forward Impulse Current
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Radiator Thickness
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPS8H100D from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS8H100D and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS8H100 High voltage power Schottky rectifier Datasheet - production data A K Features Negligible switching losses K K High junction temperature capability Low leakage current Good trade off between leakage current and forward voltage drop A A A Insulated package: TO-220AC K NC NC TO-220FPAC, insulating voltage = 2 2000 V sine RMS D PAK Avalanche capability specified ECOPACK 2 compliant component for DPAK on demand A Description K TO-220FPAC Schottky barrier rectifier designed for high frequency compact switched mode power supplies such as adaptors and on-board DC-DC converters. Table 1: Device summary Symbol Value IF(AV) 8 A V 100 V RRM Tj (max) 175 C V (typ) 0.56 V F December 2015 DocID5387 Rev 12 1/14 www.st.com This is information on a product in full production. Characteristics STPS8H100 1 Characteristics Table 2: Absolute ratings (limiting values, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V I Forward rms current 30 A F(RMS) 2 Average forward TO-220AC, D PAK TC = 165 C IF(AV) current = 0.5, 8 A TO-220FPAC T = 150 C C square wave Surge non I repetitive forward tp = 10 ms sinusoidal 250 A FSM current Repetitive peak P tp = 10 s, T= 125 C 750 W ARM j avalanche power T Storage temperature range -65 to + 175 C stg (1) Tj Maximum operating junction temperature + 175 C Notes: (1) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameter Symbol Parameter Value Unit 2 TO-220AC, D PAK 1.6 Junction to case Rth(j-c) C/W TO-220FPAC 4 Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 4.5 A (1) IR Reverse leakage current VR = VRRM T = 125 C - 2.0 6.0 mA j Tj = 25 C - 0.71 IF = 8 A T = 125 C - 0.56 0.58 j Tj = 25 C - 0.77 (2) VF Forward voltage drop IF = 10 A V T = 125 C - 0.59 0.64 j Tj = 25 C - 0.81 IF = 16 A T = 125 C - 0.65 0.68 j Notes: (1) Pulse test: tp = 5 ms, < 2% (2) Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.48 x I + 0.0125 I F(AV) F (RMS) 2/14 DocID5387 Rev 12

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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