STPSC10H065 Datasheet 650 V, 10 A high surge silicon carbide power Schottky diode Features A K No reverse recovery charge in application current range K Switching behavior independent of temperature High forward surge capability Insulated package TO-220AC Ins: A A Insulated voltage: 2500 V K RMS K TO-220AC TO-220AC insulated Typical package capacitance: 7 pF K Power efficient product K ECOPACK 2 compliant component A A NC NC Applications DPAK DPAK Switch mode power supply PFC DCDC converters LLC topologies Boost diode Description This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows Product status the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The STPSC10H065 minimal capacitive turn-off behavior is independent of temperature. Product summary This STPSC10H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge Symbol Value capability ensures a good robustness during transient phases. I F(AV) 10 A V 650 V RRM T 175 C j(max.) Product label DS9226 - Rev 8 - January 2020 www.st.com For further information contact your local STMicroelectronics sales office.STPSC10H065 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 650 V RRM I Forward rms current 22 A F(RMS) (1) TO-220AC, DPAK, DPAK, T = 135 C, DC C I Average forward current 10 A F(AV) (1) TO-220AC Ins, T = 85 C, DC C TO-220AC, DPAK, DPAK, T = 135 C, T = 175 c j (1) Repetitive peak forward C, = 0.1 I 41 A FRM current (1) TO-220AC Ins, T = 85 C, T = 175 C, = 0.1 c j t = 10 ms sinusoidal, T = 25 C 90 p c Surge non repetitive I t = 10 ms sinusoidal, T = 125 C 80 A FSM p c forward current t = 10 s square, T = 25 C 470 p c T Storage temperature range -55 to +175 C stg (2) T Operating junction temperature range -40 to +175 C j 1. Value based on R max. th(j-c) 2. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Typ. value Max. value Unit TO-220AC, DPAK, DPAK 1.25 1.5 R Junction to case C/W th(j-c) TO-220AC Ins. 2.1 3.5 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 9 100 j (1) V = V I Reverse leakage current A R R RRM T = 150 C - 85 425 j T = 25 C - 1.56 1.75 j (2) I = 10 A V Forward voltage drop V F F T = 150 C - 1.98 2.5 j 1. Pulse test: t = 10 ms, < 2% p 2. Pulse test: t = 500 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 1.35 x I + 0.115 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS9226 - Rev 8 page 2/17