Product Information

STS9P2UH7

STS9P2UH7 electronic component of STMicroelectronics

Datasheet
MOSFET P-channel 20 V, 0.0195 Ohm typ., 9 A STripFET H7 Power MOSFET in a SO-8 package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

STS9P2UH7
STMicroelectronics

1 : USD 0.1726
N/A

Obsolete
0 - WHS 2

MOQ : 2500
Multiples : 2500

Stock Image

STS9P2UH7
STMicroelectronics

2500 : USD 0.5024
N/A

Obsolete
0 - WHS 3


Multiples : 2500

Stock Image

STS9P2UH7
STMicroelectronics

N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

Stock Image

STS9P2UH7
STMicroelectronics

1 : USD 2.0471
10 : USD 1.9995
30 : USD 1.9667
100 : USD 1.9341
N/A

Obsolete
0 - WHS 5

MOQ : 1
Multiples : 1

Stock Image

STS9P2UH7
STMicroelectronics

1 : USD 0.9795
10 : USD 0.8294
100 : USD 0.6385
500 : USD 0.5648
1000 : USD 0.4522
2500 : USD 0.4522
10000 : USD 0.4464
25000 : USD 0.4313
50000 : USD 0.4186
N/A

Obsolete
0 - WHS 6

MOQ : 17
Multiples : 1

Stock Image

STS9P2UH7
STMicroelectronics

17 : USD 0.9592
25 : USD 0.9336
50 : USD 0.4994
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Typical Turn-Off Delay Time
Category
Brand Category
LoadingGif

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STS9P2UH7 P-channel 20 V, 0.0195 typ., 9 A STripFET H7 Power MOSFET in a SO-8 package Datasheet - production data Features 5 8 Order code VDS RDS(on) max ID STS9P2UH7 20 V 0.0225 4.5 V 9 A 4 1 Very low on-resistance Very low capacitance and gate charge SO-8 High avalanche ruggedness Ultra logic level Figure 1: Internal schematic diagram Applications Switching applications Description This device exhibits low on-state resistance and capacitance for improved conduction and switching performance. Table 1: Device summary Order code Marking Package Packaging STS9P2UH7 9L2U SO-8 Tape and reel For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. January 2015 DocID025143 Rev 3 1/15 www.st.com This is information on a product in full production. Contents STS9P2UH7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 SO-8 package mechanical data ........................................................ 9 5 Packaging mechanical data .......................................................... 12 5.1 SO-8 tape and reel mechanical data ............................................... 12 6 Revision history ............................................................................ 14 2/15 DocID025143 Rev 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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