STS9P2UH7 STMicroelectronics

STS9P2UH7 P-channel 20 V, 0.0195 typ., 9 A STripFET H7 Power MOSFET in a SO-8 package Datasheet - production data Features 5 8 Order code VDS RDS(on) max ID STS9P2UH7 20 V 0.0225 4.5 V 9 A 4 1 Very low on-resistance Very low capacitance and gate charge SO-8 High avalanche ruggedness Ultra logic level Figure 1: Internal schematic diagram Applications Switching applications Description This device exhibits low on-state resistance and capacitance for improved conduction and switching performance. Table 1: Device summary Order code Marking Package Packaging STS9P2UH7 9L2U SO-8 Tape and reel For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. January 2015 DocID025143 Rev 3 1/15 www.st.com This is information on a product in full production. Contents STS9P2UH7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 SO-8 package mechanical data ........................................................ 9 5 Packaging mechanical data .......................................................... 12 5.1 SO-8 tape and reel mechanical data ............................................... 12 6 Revision history ............................................................................ 14 2/15 DocID025143 Rev 3