STS7NF60L STMicroelectronics

STS7NF60L N-CHANNEL 60V - 0.017 - 7.5A SO-8 STripFET II POWER MOSFET TYPE V R I DSS DS(on) D STS7NF60L 60 V < 0.0195 7.5 A TYPICAL R (on) = 0.017 DS STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis uniqueSingle Feature Siz SO-8 strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DC MOTOR DRIVE DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC EQUIPMENT POWER MANAGEMENT IN PORTABLE/DESKTOP PCs ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 60 V DS GS V Drain-gate Voltage (R = 20 k) 60 V DGR GS V Gate- source Voltage 16 V GS I Drain Current (continuous) at T = 25C 7.5 A D C I Drain Current (continuous) at T = 100C 4.7 A D C I () Drain Current (pulsed) 30 A DM P Total Dissipation at T = 25C 2.5 W tot C (1) E Single Pulse Avalanche Energy 350 mJ AS o () Pulse width limited by safe operating area. (1) Starting T = 25 C, I = 7.5 A V = 30 V j D DD April 2002 1/8 .STS7NF60L THERMAL DATA Rthj-amb( ) Thermal Resistance Junction-ambient Max 50 C/W T Maximum Operating Junction Temperature 150 C j T Storage Temperature -55 to 150 C stg ( ) 2 When Mounted on 1 inch FR-4 board, 2 oz of Cu and t 10 sec. ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit I = 250 A, V = 0 Drain-source D GS V 60 V (BR)DSS Breakdown Voltage Zero Gate Voltage V = Max Rating I DS 1 A DSS Drain Current (V = 0) V = Max Rating T = 125C 10 A GS DS C Gate-body Leakage V = 16 V 100 nA GS I GSS Current (V = 0) DS (*) ON Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V = V I = 250 A1V GS(th) DS GS D V = 10 V I = 3.5 A R Static Drain-source On GS D 0.017 0.0195 DS(on) Resistance V = 5 V I = 3.5 A 0.019 0.0215 GS D DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g Forward Transconductance V = 15 V I = 3.5 A 13 S fs DS D C Input Capacitance V = 25V, f = 1 MHz, V = 0 1700 pF iss DS GS C Output Capacitance 300 pF oss Reverse Transfer 100 pF C rss Capacitance 2/8