STTH1302 High efficiency ultrafast diode Datasheet - production data Description A1 Dual center tap rectifier suited for switch mode K power supplies and high frequency DC to DC A2 converters. This device is especially intended for use in low K voltage, high frequency inverters, freewheeling K and polarity protection applications. Table 1: Device summary Symbol Value A2 A2 A1 A1 IF(AV) 2 x 6.5 A 2 D PAK V 200 V RRM Tj (max) 175 C V (typ) 0.81 V F Features trr (typ) 16 ns Suited for SMPS Low losses Low forward and reverse recovery time High surge current capability High junction temperature ECOPACK 2 compliant component for DPAK on demand August 2017 DocID8794 Rev 4 1/11 www.st.com This is information on a product in full production. Characteristics STTH1302 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V I Forward rms current 20 A F(RMS) T = 155 C Per diode 6.5 C Average forward current IF(peak) A = 0.5, square wave T = 145 C Per device 13 C Surge non repetitive forward IFSM tp = 10 ms sinusoidal 70 A current Tstg Storage temperature range -65 to +175 C T Maximum operating junction temperature 175 C j Table 3: Thermal parameter Symbol Parameter Max. value Unit Per diode 3 Junction to case Rth(j-c) C/W Total 1.9 Rth(c) Coupling 0.8 C/W When the diodes 1 and 2 are used simultaneously: T = P x R + P x R j(diode1) (diode1) th(j-c) (per diode) (diode2) th(c) Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 6 (1) I Reverse leakage current V = V A R R RRM T = 125 C - 3 60 j Tj = 25 C - 1.10 I = 6.5 A F T = 125 C - 0.81 0.95 j (2) VF Forward voltage drop V Tj = 25 C - 1.25 I = 13 A F T = 125 C - 0.95 1.10 j Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: tp = 380 s, < 2% To evaluate the conduction losses, use the following equation: 2 P = 0.80 x IF(AV) + 0.023 x IF (RMS) 2/11 DocID8794 Rev 4