Product Information

STTH1L06RL

STTH1L06RL electronic component of STMicroelectronics

Datasheet
Rectifiers Vr/600V Io/1A T/R
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

135: USD 0.133 ea
Line Total: USD 17.96

169785 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 135  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
169785 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 135
Multiples : 1

Stock Image

STTH1L06RL
STMicroelectronics

135 : USD 0.0827
250 : USD 0.0811

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
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Additional Infomation About Product

STTH1L06 Turbo 2 ultrafast high voltage rectifier Features Ultrafast switching Low reverse recovery current Reduces switching and conduction losses Low thermal resistance SMB DO-41 STTH1L06U Description STTH1L06 The STTH1L06/U/A, which is using ST Turbo 2 600 V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. The device is also intended for use as a free SMA wheeling diode in power supplies and other power STTH1L06A switching applications. Table 1. Device summary Symbol Value I 1 A F(AV) V 600 V RRM I (max) 75 A R T (max) 175 C j V (max) 1.05 V F t (max) 80 ns rr October 2009 Doc ID 8321 Rev 4 1/9 www.st.com 9Characteristics STTH1L06 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM DO-41 10 I Forward rms voltage A F(RMS) SMA / SMB 7 DO-41 T = 120 C c I Average forward current = 0.5 SMA T = 135 C 1A F(AV) c SMB T = 145 C c t = 10 ms sinusoidal DO-41 30 p I Surge non repetitive forward current A FSM t = 10 ms sinusoidal SMA / SMB 20 p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal parameters Symbol Parameter Value (max) Unit L = 10 mm DO-41 45 R Junction to lead SMA 30 th(j-l) C/W SMB 25 (1) R Junction to ambient L = 10 mm DO-41 70 th(j-a) 2 1. Rth(j-a) is measured with a copper area S = 5 cm (see Figure 14.) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 1 j I Reverse leakage current V = 600 V A R R T = 150 C 10 75 j T = 25 C 1.3 j V Forward voltage drop I = 1 A V F F T = 150 C 0.85 1.05 j To evaluate the conduction losses use the following equation: 2 P = 0.89 x I + 0.165 I F(AV) F (RMS) 2/9 Doc ID 8321 Rev 4

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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