STTH16R04C Ultrafast recovery diode Datasheet - production data A1 Description K This series uses ST s new 400 V planar Pt A2 doping technology. This device is specially suited for switching mode base drive and transistor K circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverters, freewheeling A2 and polarity protection. K A1 TO-220AB Table 1: Device summary Symbol Value K K IF(AV) 2 x 8 A VRRM 400 V Tj (max) 175 C V (typ) 0.9 V A2 F A2 A1 A1 trr (typ) 25 ns D PAK Features Very low switching losses High frequency and/or high pulsed current operation High junction temperature ECOPACK 2 compliant component for DPAK on demand November 2016 DocID13391 Rev 2 1/12 www.st.com This is information on a product in full production. Characteristics STTH16R04C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V I Forward rms current 30 A F(RMS) TC = 150 C Per diode 8 Average forward current I A F(AV) = 0.5, square wave T = 145 C Per device 16 C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 120 A T Storage temperature range -65 to +175 C stg Tj Maximum operating junction temperature range -40 to +175 C Table 3: Thermal parameter Symbol Parameter Max. value Unit Per diode 2 Junction to case Rth(j-c) C/W Per device 1.15 R Coupling 0.3 C/W th(c) When the diodes 1 and 2 are used simultaneously: T = P x R + P x R j(diode1) (diode1) th(j-c) (per diode) (diode2) th(c) Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 10 (1) IR Reverse leakage current VR = VRRM A T = 125 C - 10 100 j Tj = 25 C - 1.5 T = 100 C I = 8 A - 1.05 1.3 j F Tj = 150 C - 0.9 1.1 (2) VF Forward voltage drop V T = 25 C - 1.75 j Tj = 100 C IF = 16 A - 1.25 1.55 T = 150 C - 1.12 1.37 j Notes: (1) Pulse test: tp = 5 ms, < 2% (2) Pulse test: tp = 380 s, < 2% To evaluate the conduction losses, use the following equation: 2 P = 0.83 x I + 0.034 x I F(AV) F (RMS) 2/12 DocID13391 Rev 2