Product Information

STTH1R06AF

STTH1R06AF electronic component of STMicroelectronics

Datasheet
Rectifiers DFD THYR TRIAC & RECTIFIER

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

6000: USD 0.1591 ea
Line Total: USD 954.6

0 - Global Stock
MOQ: 6000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 6000
Multiples : 3000

Stock Image

STTH1R06AF
STMicroelectronics

6000 : USD 0.1591

0 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

STTH1R06AF
STMicroelectronics

1 : USD 1.1133
10 : USD 0.534
100 : USD 0.29

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
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STTH1R06AF Datasheet 600 V, 1 A, turbo 2 ultrafast rectifier Features K A Ultrafast recovery Low power losses High surge capability Low leakage current High junction temperature SOD128Flat ECOPACK 2 compliant component Applications Clamping function Boost diode PFC Description The STTH1R06AF is an ultrafast recovery power rectifier housed in SOD128Flat to improve space saving. It is especially designed for clamping function in energy recovery block or boost diode in power correction circuitry. The compromise between forward voltage drop and recovery time offers optimized performance. Product status STTH1R06AF Product summary I 1 A F(AV) V 600 V RRM t 30 ns rr T 175 C j V 1.08 V F(typ.) DS12471 - Rev 2 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office.STTH1R06AF Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I T = 135 C, = 0.5 Average forward current 1 A F(AV) L I Surge non repetitive forward current t = 10 ms sinusoidal 20 A FSM p T Storage temperature range -65 to +175 C stg T Operating junction temperature 175 C j Table 2. Thermal parameters Symbol Parameter Typ. Max. Unit R Junction to lead 16 24 C/W th(j-l) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 1 j I V = 600 V Reverse leakage current A R R T = 150 C - 10 75 j T = 25 C - 1.9 j V I = 1 A Forward voltage drop V F F T = 150 C - 1.08 1.4 j To evaluate the conduction losses, use the following equation: 2 P = 1.1 x I + 0.30 x I F(AV) F (RMS) Table 4. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit t T = 25 C I = 1 A, V = 30 V, dl /dt = -50 A/s Reverse recovery time - 30 45 ns rr j F R F I Reverse recovery current - 3 A RM Q T = 125 C I = 1 A, V = 400 V, dl /dt = -200 A/s Reverse recovery charge - 90 nC RR j F R F t Reverse recovery time - 65 ns rr DS12471 - Rev 2 page 2/10

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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