STTH1R06RL STMicroelectronics

STTH1R06 Turbo 2 ultrafast high voltage rectifier Features A Ultrafast switching A Low reverse recovery current K Low thermal resistance K Reduces switching and conduction losses DO-41 SMA STTH1R06 STTH1R06A Description A The STTH1R06, which is using ST Turbo 2 600 V technology, is specially suited as boost diode in power factor correction circuitry. K The device is also intended for use as a free SMB wheeling diode in power supplies and other power STTH1R06U switching applications. Table 1. Device summary Symbol Value I 1 A F(AV) V 600 V RRM I (max) 75 A R T 175 C j V (typ) 1.0 V F t (max) 25 ns rr October 2009 Doc ID 10203 Rev 5 1/9 www.st.com 9Characteristics STTH1R06 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM DO-41 10 I Forward rms current A F(RMS) SMA / SMB 7 DO-41 T = 100 C = 0.5 c I Average forward current SMA T = 125 C = 0.5 1A F(AV) c SMB T = 135 C = 0.5 c DO-41 25 I Surge non repetitive forward current t = 10ms sinusoidal A FSM p SMA / SMB 20 T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal resistance Symbol Parameter Value (max) Unit L = 10 mm DO-41 45 R Junction to lead SMA 30 C/W th(j-l) SMB 25 (1) R Junction to ambient L = 10 mm DO-41 70 C/W th(j-a) 1. R is measured with a copper area S = Scm2 (see Figure 14). th(j-a) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 1 j I Reverse leakage current V = V A R R RRM T = 150 C 10 75 j T = 25 C 1.7 j V Forward voltage drop I = 1A V F F T = 150 C 1.0 1.25 j 2 To evaluate the conduction losses use the following equation: P = 1.03 x I + 0.27 I F(AV) F (RMS) 2/9 Doc ID 10203 Rev 5