Product Information

STTH60SW03CW

STTH60SW03CW electronic component of STMicroelectronics

Datasheet
Rectifiers Turbo 2 ultrafast high voltage rectifier

Manufacturer: STMicroelectronics
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Price (USD)

1: USD 7.2123 ea
Line Total: USD 7.21

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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STTH60SW03CW
STMicroelectronics

1 : USD 7.2123
10 : USD 2.6072
100 : USD 2.0942
600 : USD 1.7203
1200 : USD 1.4211

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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STTH60SW03C Turbo 2 ultrafast high voltage rectifier Datasheet production data Description A1 K The STTH60SW03C uses ST Turbo 2 300 V A2 technology. It is especially suited to be used for DC/DC and DC/AC converters in the secondary stage of MIG/MMA/TIG welding machines. Housed in ST s TO-247, this device offers high power integration for all welding machines and industrial applications. Table 1. Device summary A2 K Symbol Value A1 TO-247 I 2 x 30A F(AV) V 300 V RRM Features t (typ) 20 ns rr Ultrafast switching V (typ) 1.05 V F Low reverse recovery current T (max) 175 C j Reduces switching losses Low thermal resistance ECOPACK 2 compliant component January 2015 DocID026582 Rev 1 1/9 This is information on a product in full production. www.st.com 9Characteristics STTH60SW03C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 300 V RRM I Forward rms current 45 A F(RMS) T = 85 C Per diode 30 C Average forward current, = 0.5 square I A F(AV) waveform T = 75 C Per device 60 C t = 10 ms sinusoidal I Surge non repetitive forward current 200 A FSM p T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal parameters Symbol Parameter Value Unit Per diode 1.8 R Junction to case th(j-c) Total 1 C/W RCoupling 0.2 th(c) When diodes 1 and 2 are used simultaneously: T = P x R (per diode) + P x R j(diode1) (diode1) th(j-c) (diode2) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 15 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 15 150 j T = 25 C 1.55 j I = 30 A F T = 150 C 1.05 1.25 j (2) V Forward voltage drop V F T = 25 C 1.85 j I = 60 A F T = 150 C 1.35 1.6 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.89 x I + 0.012 I F(AV) F (RMS) 2/9 DocID026582 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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