STTH6112TV Ultrafast recovery - 1200 V diode Main product characteristics K2 A2 A2 K1 I 2 x 30 A F(AV) V 1200 V RRM T 150 C j K1 A1 A1 V (typ) 1.30 V K2 F STTH6112TV2 STTH6112TV1 t (typ) 45 ns rr A1 A1 K1 K2 Features and benefits A2 Ultrafast, soft recovery K1 A2 K2 Very low conduction and switching losses ISOTOP High frequency and/or high pulsed current operation High reverse voltage capability Order codes High junction temperature Insulated package: Part Number Marking Electrical insulation = 2500 V RMS STTH6112TV1 STTH6112TV1 Capacitance < 45 pF STTH6112TV2 STTH6112TV2 Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/8 www.st.com 8Characteristics STTH6112TV 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1200 V RRM I RMS forward current 100 A F(RMS) I Average forward current, = 0.5 T = 70 C per diode 30 A F(AV) c I Repetitive peak forward current t = 5 s, F = 5 kHz square 300 A FRM p Surge non repetitive forward I t = 10 ms Sinusoidal 250 A FSM p current T Storage temperature range -65 to + 150 C stg T Maximum operating junction temperature 150 C j Table 2. Thermal parameters Symbol Parameter Value Unit Per diode 1.16 R Junction to case th(j-c) Total 0.63 C/W R Coupling thermal resistance 0.1 th(c) When the diodes are used simultaneously: T = P x R (per diode) + P x R j(diode1) (diode1) th(j-c) (diode2) th(c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 20 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 15 150 j T = 25 C 2.10 j T = 125 C I = 25 A 1.25 1.90 j F T = 150 C 1.20 1.80 j (2) V Forward voltage drop V F T = 25 C 2.25 j T = 125 C I = 30 A 1.35 2.05 j F T = 150 C 1.30 1.95 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 1.60 x I + 0.012 I F(AV) F (RMS) 2/8