STU8N80K5 STMicroelectronics

STP8N80K5, STU8N80K5 N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220 and IPAK packages Datasheet production data Features Order codes V R max. I P DS DS(on) D TOT STP8N80K5 TAB 800 V 0.95 6 A 110 W TAB STU8N80K5 3 Worldwide best FOM (figure of merit) 2 1 3 2 Ultra low gate charge 1 IPAK TO-220 100% avalanche tested Zener-protected Applications Switching applications Figure 1. Internal schematic diagram D(2,TAB) Description These N-channel Zener-protected Power MOSFETs are designed using STs revolutionary avalanche-rugged very high voltage G(1) SuperMESH 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STP8N80K5 TO-220 8N80K5 Tube STU8N80K5 IPAK March 2013 DocID023544 Rev 4 1/16 This is information on a product in full production. www.st.com 16Contents STP8N80K5, STU8N80K5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 15 2/16 DocID023544 Rev 4