STU7LN80K5 STMicroelectronics

STU7LN80K5 N-channel 800 V, 0.95 typ., 5 A MDmesh K5 Power MOSFET in a IPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STU7LN80K5 800 V 1.15 5 A Industrys lowest R x area DS(on) 3 2 Industrys best figure of merit (FoM) 1 Ultra-low gate charge 100% avalanche tested Zener-protected IPAK Applications Switching applications Figure 1: Internal schematic diagram Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STU7LN80K5 7LN80K5 IPAK Tube January 2016 DocID028830 Rev 1 1/12 www.st.com This is information on a product in full production. Contents STU7LN80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 IPAK type C package information ..................................................... 9 5 Revision history ............................................................................ 11 2/12 DocID028830 Rev 1