Product Information

STV300NH02L

STV300NH02L electronic component of STMicroelectronics

Datasheet
MOSFET N Ch 24V 0.8m 280A Pwr MOSFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 600
Multiples : 600

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STV300NH02L
STMicroelectronics

600 : USD 3.8431
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

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STV300NH02L
STMicroelectronics

1 : USD 6.3979
10 : USD 5.746
N/A

Obsolete
0 - WHS 3

MOQ : 17
Multiples : 17

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STV300NH02L
STMicroelectronics

17 : USD 2.0893
30 : USD 2.0119
125 : USD 2.0119
300 : USD 1.9345
N/A

Obsolete
0 - WHS 4

MOQ : 600
Multiples : 600

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STV300NH02L
STMicroelectronics

600 : USD 3.409
N/A

Obsolete
0 - WHS 5

MOQ : 1
Multiples : 1

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STV300NH02L
STMicroelectronics

1 : USD 11.4182
10 : USD 11.1445
30 : USD 10.9612
100 : USD 10.7803
N/A

Obsolete
0 - WHS 6

MOQ : 1
Multiples : 1

Stock Image

STV300NH02L
STMicroelectronics

1 : USD 9.4028
10 : USD 6.1545
25 : USD 5.8233
100 : USD 5.0433
600 : USD 4.2953
1200 : USD 3.7611
N/A

Obsolete
0 - WHS 7

MOQ : 3
Multiples : 1

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STV300NH02L
STMicroelectronics

3 : USD 8.3376
10 : USD 6.4444
25 : USD 5.6277
100 : USD 4.8672
250 : USD 4.7292
500 : USD 4.2558
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif

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Additional Infomation About Product

STV300NH02L N-channel 24 V, 0.8 m typ., 200 A STripFET III Power MOSFET in a PowerSO-10 package Datasheet production data Features Order code V R max I DSS DS(on) D (1) STV300NH02L 24 V 0.001 200 A 10 1. This value is limited by package 1 R *Q industrys benchmark PowerSO-10 DS(on) g Conduction losses reduced Low profile, very low parasitic inductance Switching losses reduced Figure 1. Internal schematic diagram Applications Switching applications OR-ing Specially designed and optimized for high efficiency DC/DC converters. Description This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics unique single feature size Figure 2. Connection diagram (top view) strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Order code Marking Package Packaging STV300NH02L 300NH02L PowerSO-10 Tape and reel October 2012 Doc ID 13301 Rev 3 1/14 This is information on a product in full production. www.st.com 14Content STV300NH02L Content 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 11 6 Revision history . 13 2/14 Doc ID 13301 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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