STV300NH02L STMicroelectronics

STV300NH02L N-channel 24 V, 0.8 m typ., 200 A STripFET III Power MOSFET in a PowerSO-10 package Datasheet production data Features Order code V R max I DSS DS(on) D (1) STV300NH02L 24 V 0.001 200 A 10 1. This value is limited by package 1 R *Q industrys benchmark PowerSO-10 DS(on) g Conduction losses reduced Low profile, very low parasitic inductance Switching losses reduced Figure 1. Internal schematic diagram Applications Switching applications OR-ing Specially designed and optimized for high efficiency DC/DC converters. Description This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics unique single feature size Figure 2. Connection diagram (top view) strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Order code Marking Package Packaging STV300NH02L 300NH02L PowerSO-10 Tape and reel October 2012 Doc ID 13301 Rev 3 1/14 This is information on a product in full production. www.st.com 14Content STV300NH02L Content 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 11 6 Revision history . 13 2/14 Doc ID 13301 Rev 3