X-On Electronics has gained recognition as a prominent supplier of STU7N80K5 mosfet across the USA, India, Europe, Australia, and various other global locations. STU7N80K5 mosfet are a product manufactured by STMicroelectronics. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

STU7N80K5

STU7N80K5 electronic component of STMicroelectronics
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See Product Specifications
Part No.STU7N80K5
Manufacturer: STMicroelectronics
Category:MOSFET
Description: STMicroelectronics MOSFET N-Ch 800 V 0.95 Ohm 6 A Zener-protecte
Datasheet: STU7N80K5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2165 ea
Line Total: USD 1.22

Availability - 1
Ships to you between
Thu. 06 Jun to Tue. 11 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - WHS 1


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 1.2165
10 : USD 1.009
30 : USD 0.9064
75 : USD 0.8037
525 : USD 0.7411
975 : USD 0.709

38 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 28
Multiples : 1
28 : USD 1.4592

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STD7N80K5, STP7N80K5, STU7N80K5 Datasheet N-channel 800 V, 0.95 typ., 6 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages Features TAB TAB 3 V R I Order code DS DS(on) max D 1 DPAK STD7N80K5 3 2 TO-220 TAB 1 STP7N80K5 800 V 1.2 6 A STU7N80K5 3 2 IPAK 1 Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) D(2, TAB) Ultra-low gate charge 100% avalanche tested G(1) Zener-protected Applications S(3) Switching applications AM01476v1 tab Description These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STD7N80K5 STP7N80K5 STU7N80K5 DS9173 - Rev 7 - September 2020 www.st.com For further information contact your local STMicroelectronics sales office.STD7N80K5, STP7N80K5, STU7N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate- source voltage 30 V GS I Drain current (continuous) at T = 25 C 6 A D C I Drain current (continuous) at T = 100 C 3.8 A D C (1) I Drain current (pulsed) 24 A DM P Total power dissipation at T = 25 C 110 W TOT C Max current during repetitive or single pulse avalanche I 2 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 88 mJ AS (starting T = 25 C, I =I , V = 50 V) J D AS DD (2) Peak diode recovery voltage slope 4.5 V/ns dv/dt (2) di/dt Peak diode recovery current slope 100 A/s (3) dv/dt MOSFET dv/dt ruggedness 50 V/ns T Operating junction temperature range C j -55 to 150 T Storage temperature range C stg 1. Pulse width limited by safe operating area. 2. I 6 A, V V SD DS(peak) (BR)DSS 3. V 640 V DS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 IPAK R Thermal resistance junction-case 1.14 C/W thj-case R Thermal resistance junction-amb 62.5 100 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. DS9173 - Rev 7 page 2/23

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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