STW22NM60N STMicroelectronics

STW22NM60N electronic component of STMicroelectronics
STW22NM60N STMicroelectronics
STW22NM60N MOSFETs
STW22NM60N  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STW22NM60N MOSFETs across the USA, India, Europe, Australia, and various other global locations. STW22NM60N MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.STW22NM60N
Manufacturer:STMicroelectronics
Category:MOSFETs
Description:STW22NM60N
High voltage N-channel MOSFET ideal for switching applications.
Datasheet:STW22NM60N Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
  
30: USD 4.849 ea
Line Total: USD 145.47 
Availability : 0
  
QtyUnit Price
30$ 4.849
  

Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 30
Multiples : 1
QtyUnit Price
30$ 4.849

   
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RoHS - XON
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We are delighted to provide the STW22NM60N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STW22NM60N and other electronic components in the MOSFETs category and beyond.

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The STW22NM60N is a N-channel MOSFET developed by STMicroelectronics. This part is part of ST’s STripFET III series, designed for use in automotive and lighting applications that require an extremely low on-resistance, high breakdown voltage, and fast switching speed. It features an incredibly low 0.21 ohm on-resistance, a 600V drain-source breakdown voltage, and very fast switching times. The silicon used in the STW22NM60N is based on a “super-junction” design, which results in improved performance compared to earlier designs. This part is equipped with a built-in temperature diode to help protect against excessive temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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