STW23N80K5 STMicroelectronics

STW23N80K5 N-channel 800 V, 0.23 typ., 16 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STW23N80K5 800 V 0.28 16 A 190 W Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) 3 Ultra low gate charge 2 100% avalanche tested 1 Zener-protected TO-247 Applications Switching applications Figure 1: Internal schematic diagram Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STW23N80K5 23N80K5 TO-247 Tube August 2015 DocID028280 Rev 1 1/12 www.st.com This is information on a product in full production. Contents STW23N80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-247 package information ............................................................. 9 5 Revision history ............................................................................ 11 2/12 DocID028280 Rev 1