STFW3N150, STH3N150-2 STP3N150, STW3N150 Datasheet N-channel 1500 V, 2.5 A, 6 typ., PowerMESH Power MOSFETs 2 in TO-3PF, H PAK-2, TO-220 and TO247 packages Features TAB V R max. I P Order codes DS DS(on) D TOT 2 3 1 3 STFW3N150 63 W 2 2 H PAK-2 1 STH3N150-2 TO-3PF 1500 V 9 2.5 A STP3N150 140 W TAB STW3N150 3 3 100% avalanche tested 2 2 1 1 TO-220 Intrinsic capacitances and Qg minimized TO-247 High speed switching Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) D(2, TAB) D(TAB) Applications Switching applications G(1) G(1) Description S(3) S(2, 3) 2 (TO-3PF, TO-220 and TO-247) (H PAK-2) These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or AM15557v1 improves on the performance of comparable standard parts from other manufacturers. Product status link STFW3N150 STH3N150-2 STP3N150 STW3N150 DS5052 - Rev 12 - May 2020 www.st.com For further information contact your local STMicroelectronics sales office.STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical ratings 1 Electrical ratings Table 1. Value Symbol Parameter Unit 2 TO-3PF H PAK-2 TO-220 TO-247 V Drain-source voltage 1500 V DS V Gate-source voltage 30 V GS (1) Drain current (continuous) at T = 25 C 2.5 C 2.5 I A D (1) Drain current (continuous) at T = 100 C C 1.6 1.6 (2) I Drain current (pulsed) 10 A DM P Total power dissipation at T = 25 C 63 140 W TOT C Insulation withstand voltage (RMS) from all three leads to V 3.5 kV ISO external heat sink (t = 1 s T = 25 C) C Derating factor 0.5 1.12 W/C T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. Table 2. Thermal data Value Symbol Parameter Unit 2 TO-3PF TO-220 TO-247 H PAK-2 R Thermal resistance junction-case 2 0.89 C/W thj-case R Thermal resistance junction-ambient 50 62.5 50 C/W thj-amb (1) R Thermal resistance junction-pcb 35 C/W thj-pcb 2 1. When mounted on 1 inch FR-4 board, 2 oz Cu. Table 3. Symbol Parameter Max value Unit Avalanche current, repetitive or not-repetitive I 2.5 A AR (pulse width limited by T max) J Single pulse avalanche energy E 450 mJ AS (starting T = 25 C, I = I , V = 50 V) J D AR DD DS5052 - Rev 12 page 2/22