STY80NM60N STMicroelectronics

STY80NM60N N-channel 600 V, 0.030 , 74 A, MDmesh II Power MOSFET Max247 Features V DSS Type R max I DS(on) D T Jmax STY80NM60N 650 V < 0.035 74 A The worldwide best R in Max247 DS(on) 3 2 100% avalanche tested 1 Low input capacitance and gate charge Max247 Low gate input resistance Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order code Marking Package Packaging STY80NM60N 80NM60N Max247 Tube July 2011 Doc ID 14210 Rev 6 1/12 www.st.com 12Contents STY80NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 14210 Rev 6