T1035H-6G-TR STMicroelectronics

T1035H-6G-TR electronic component of STMicroelectronics
T1035H-6G-TR STMicroelectronics
T1035H-6G-TR Triacs
T1035H-6G-TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of T1035H-6G-TR Triacs across the USA, India, Europe, Australia, and various other global locations. T1035H-6G-TR Triacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

Part No. T1035H-6G-TR
Manufacturer: STMicroelectronics
Category: Triacs
Description: STMicroelectronics Triacs Hi temp 10A Triacs
Datasheet: T1035H-6G-TR Datasheet (PDF)
Price (USD)
1: USD 5.1354 ea
Line Total: USD 5.14 
Availability : 17
  
Ship by Fri. 15 Aug to Wed. 20 Aug
QtyUnit Price
1$ 5.1354
10$ 2.988
30$ 2.6892
100$ 2.1761
500$ 2.0366
1000$ 1.9761

Availability 17
Ship by Fri. 15 Aug to Wed. 20 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.1354
10$ 2.988
30$ 2.6892
100$ 2.1761
500$ 2.0366
1000$ 1.9761

   
Manufacturer
Product Category
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the T1035H-6G-TR from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T1035H-6G-TR and other electronic components in the Triacs category and beyond.

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T1035H, T1050H High temperature 10 A Snubberless Triacs Features A2 Medium current Triac 150 C max. T turn-off commutation j G A2 Low thermal resistance with clip bonding A1 A2 Very high 3 quadrant commutation capability Packages are RoHS (2002/95/EC) compliant G UL certified (ref. file E81734) G A2 A2 A1 A1 2 Applications TO-220AB D PAK T10xxH-6T T10xxH-6G Especially designed to operate in high power density or universal motor applications such as vacuum cleaner and washing machine drum motor, these 10 A Triacs provide a very high switching capability up to junction temperatures of 150 C. G A2 The heatsink can be reduced, compared to A1 traditional Triacs, according to the high TO-220AB Insulated performance at given junction temperatures. T10xxH-6I Description Table 1. Device summary Available in through-hole or surface mount packages, the T1035H and T1050H Triacs series Symbol Value Unit are suitable for general purpose mains power ac I 10 A T(RMS) switching. V /V 600 V DRM RRM By using an internal ceramic pad, the T10xxH-6I provides voltage insulation (rated at 2500 V rms). I 35 or 50 mA GT TM: Snubberless is a trademark of STMicroelectronics September 2011 Doc ID 13565 Rev 2 1/10 www.st.com 10Characteristics T1035H, T1050H 1 Characteristics Table 2. Absolute maximum ratings Symbol Parameter Value Unit 2 D PAK, TO-220AB T = 135 C c I On-state rms current (full sine wave) 10 A T(RMS) TO-220AB Ins T = 125 C c F = 50 Hz t = 20 ms 100 Non repetitive surge peak on-state I A TSM current (full cycle, T initial = 25 C) j F = 60 Hz t = 16.7 ms 105 ItI t Value for fusing t = 10 ms 66 A s p Critical rate of rise of on-state current I G dI/dt F = 120 Hz T = 150 C 50 A/s j = 2 x I , t 100 ns GT r Non repetitive surge peak off-state V /V DRM RRM V /V t = 10 ms T = 25 C V DSM RSM p j voltage + 100 I Peak gate current t = 20 s T = 150 C 4 A GM p j P Average gate power dissipation T = 150 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 150 j Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Value Symbol Test Conditions Quadrant Unit T1035H T1050H (1) I I - II - III MAX. 35 50 mA GT V = 12 V, R = 33 D L V I - II - III MAX. 1.0 V GT V V = V , R = 3.3 k I - II - III MIN. 0.15 V GD D DRM L (2) I I = 500 mA MAX. 35 75 mA H T I - III 50 90 I I = 1.2 I MAX. mA L G GT II 80 110 (2) dV/dt V = 67% V gate open, T = 150 C MIN. 1000 1500 V/s D DRM, j (2) (dI/dt)c Without snubber, T = 150 C MIN. 13 18 A/ms j 1. minimum I is guaranted at 20% of I max. GT GT 2. for both polarities of A2 referenced to A1. 2/10 Doc ID 13565 Rev 2

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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