X-On Electronics has gained recognition as a prominent supplier of TN1205H-6G-TR SCRs across the USA, India, Europe, Australia, and various other global locations. TN1205H-6G-TR SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

TN1205H-6G-TR STMicroelectronics

TN1205H-6G-TR electronic component of STMicroelectronics
TN1205H-6G-TR STMicroelectronics
TN1205H-6G-TR SCRs
TN1205H-6G-TR  Semiconductors

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Part No. TN1205H-6G-TR
Manufacturer: STMicroelectronics
Category: SCRs
Description: SCRs High Temp 12A SCR 600V 2 to 5 mA IGT
Datasheet: TN1205H-6G-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
0: USD 0.45 ea
Line Total: USD 0 
Availability - 970
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ: 0  Multiples: 1
Pack Size: 1
Availability Price Quantity
970
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 0
Multiples : 1
0 : USD 0.45

   
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Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
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We are delighted to provide the TN1205H-6G-TR from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN1205H-6G-TR and other electronic components in the SCRs category and beyond.

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TN1205H Datasheet High temperature 12 A SCRs Features A High junction temperature: T = 150 C j G Medium current SCRs K A High noise immunity up to 150 C A RoHS (2002/95/EC) compliant 600 V V , V DRM RRM K A K A G G Applications DPAK TO-220AB General purpose AC line load switching Motor control circuits Small home appliances Lighting Inrush current limiting circuits Overvoltage crowbar protection Description Available in standard gate triggering levels, the TN1205H SCR series has very high switching capability up to a junction temperature of 150 C. These products fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush Product status link current limiting circuits, capacitive discharge ignition and voltage regulation circuits. TN1205H These products are particulary adapted for use in areas where the ambient temperature is high or the ventilation low, or where an increase of power density is Product summary required. Through-hole or surface-mount packages provide performance in a limited space V , V 600 V DRM RRM area. I 2 to 5 mA GT DS7117 - Rev 5 - September 2020 www.st.com For further information contact your local STMicroelectronics sales office.TN1205H Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I RMS on-state current (180 conduction angle)) 12 T(RMS) 2 D PAK, T = 136 C A c TO-220AB I Average on-state current (180 conduction angle) 7.6 T(AV) t = 8.3 ms 126 p I Non repetitive surge peak on-state current T = 25 C A TSM j t = 10 ms 120 p 2 2 2 t = 10 ms 72 I t I t value for fusing p A s dl/dt Critical rate of rise of on-state current, I = 2 x I , tr 100 ns, F = 60 Hz T = 150 C 100 A/s G GT j V / V /V DSM DRM RRM t = 10 ms Non Repetitive peak off-state voltage V p V +100 RSM I t = 20 s T = 150 C Peak gate current 4 A GM p j P T = 150 C Average gate power dissipation 1 W G(AV) j V Maximum peak reverse gate voltage 5 V RGM T Storage temperature range -40 to +150 C stg T Operating junction temperature range -40 to +150 C j T Maximum lead temperature for soldering during 10 s. 260 C L Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Value Unit Max. 2 (1) I mA GT V = 12 V, R = 33 Max. 5 D L V Max. 1.3 V GT V V = V , R = 3.3 k GD D DRM L Min. 0.2 V I I = 1.2 x I Max. 40 mA L G GT (2) I I = 500 mA, gate open Max. 20 mA T H T = 125 C 200 j (2) V = 67% V , gate open Min. V/s dV/dt D DRM T = 150 C 100 j t I = 40 A, V = 500 V, I = 100 mA, dI /dt = 5 A/s Typ. 1.9 s gt TM D G G V = 335 V, T =125 C, I = 20 A, V = 25 V, (dI /dt) = 30 A/s, dV /dt = 50 DM j TM R T Max D t Typ. 65 s q V/s, R = 100 GK 1. Minimum I is guaranteed at 20% of I max. GT GT 2. For both polarities of A2 referenced to A1. DS7117 - Rev 5 page 2/14

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
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