TN1205T-600B-TR STMicroelectronics

TN1205T-600B-TR electronic component of STMicroelectronics
TN1205T-600B-TR STMicroelectronics
TN1205T-600B-TR SCRs
TN1205T-600B-TR  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of TN1205T-600B-TR SCRs across the USA, India, Europe, Australia, and various other global locations. TN1205T-600B-TR SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

Part No.TN1205T-600B-TR
Manufacturer:STMicroelectronics
Category:SCRs
Description:Thyristor; 600V; 8A; 12A; 5mA; Package: Reel, tape; SMD; DPAK
Datasheet:TN1205T-600B-TR Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
2500: USD 0.5872 ea
Line Total: USD 1468 
Availability : 2425
  
Ship by Thu. 25 Jun to Wed. 01 Jul
QtyUnit Price
2500$ 0.5872
  

Availability1206
Ship by Thu. 25 Jun to Wed. 01 Jul
MOQ : 596
Multiples : 1
QtyUnit Price
596$ 0.4365


Availability4850
Ship by Thu. 25 Jun to Wed. 01 Jul
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.355
5000$ 0.3508


Availability4850
Ship by Thu. 25 Jun to Wed. 01 Jul
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.355
5000$ 0.3508


Availability744
Ship by Tue. 23 Jun to Thu. 25 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.504
10$ 0.4886
41$ 0.4676
100$ 0.4452
113$ 0.4424


Availability538
Ship by Thu. 25 Jun to Wed. 01 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.414
10$ 1.1532
30$ 0.7671
100$ 0.579
500$ 0.5281
1000$ 0.5007


Availability1206
Ship by Thu. 25 Jun to Wed. 01 Jul
MOQ : 669
Multiples : 1
QtyUnit Price
669$ 0.389
676$ 0.3849
683$ 0.3809
690$ 0.3769
1000$ 0.3728


Availability2425
Ship by Thu. 25 Jun to Wed. 01 Jul
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.5872

   
Manufacturer
Product Category
On-State RMS Current - It RMS
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
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We are delighted to provide the TN1205T-600B-TR from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN1205T-600B-TR and other electronic components in the SCRs category and beyond.

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TN1205T-600 12 A SCR Features High current density per square mm Applications Overvoltage crowbar protection A Motor control circuits in power tools and kitchen aids K Inrush current limiting circuits A G Description DPAK This device is mounted in DPAK and intended for TN1205T-600B use in applications such as voltage regulators circuits for motorbikes, overvoltage crowbar protection, motor control circuits in power tools and capacitive discharge ignition. Table 1. Device summary I 12 A T(rms) V /V 600 V DRM RRM I 2 to 5 mA GT October 2009 Doc ID 16339 Rev 1 1/8 www.st.com 8Characteristics TN1205T-600 1 Characteristics (1) Table 2. Absolute ratings Symbol Parameter Value Unit I On-state rms current (180 C conduction angle) T = 103 C 12 A T(RMS) c I Average on-state current(180 C conduction angle) T = 103 C 8 A T(AV) c t = 8.3 ms 120 p I Non repetitive surge peak on-state current A TSM t = 10 ms 115 p 2 2 2 ITI T value for fusing t = 10 ms 66 A s p Critical rate of rise of on-state current di/dt F = 60 Hz T = 125 C 50 A/s j I = 2 x I , tr 100 ns G GT I Peak gate current t = 20 s T = 125 C 4 A GM p c P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range -40 to + 150 stg C T Operating junction temperature range -40 to + 125 j 1. T = 25 C, unless otherwise specified j (1) Table 3. Electrical characteristics Symbol Test conditions Min. Typ. Max. Unit I V = 12 V, R = 33 25mA GT D L V V = 12 V, R = 33 1.3 V GT D L V V = V R = 3.3 k T = 125 C 0.2 V GD D DRM, L j I I = 500 mA gate open 15 mA H T I I = 1.2 I 30 mA L G GT dV/dt V = 67% V gate open T = 125 C 100 V/s D DRM j Gate controlled turn on time t I = 40 A, V = V , I = 100 mA 1.2 s GT TM D DRM(MAX) GT dI /dt = 5 A/s, R = 68 G G Circuit commutated turn off time t V = 67% V , T = 125 C, I = 20 A, V = 25 V 55 s q D DRM(MAX) j TM R dI /dt = 30 A/S, dV /dt = 50 V/s, R = 100 T D GK V I = 24 A, T = 380 s 1.6 V TM TM p V Threshold voltage T = 125 C 0.85 V T0 j R Dynamyc restistance T = 125 C 30 m d j T = 25 C 5 A I j DRM V = V DRM RRM I RRM T = 125 C 2 mA j 1. T = 25 C, unless otherwise specified j 2/8 Doc ID 16339 Rev 1

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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