TN1205T-600B-TR STMicroelectronics

TN1205T-600B-TR electronic component of STMicroelectronics
TN1205T-600B-TR STMicroelectronics
TN1205T-600B-TR SCRs
TN1205T-600B-TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TN1205T-600B-TR SCRs across the USA, India, Europe, Australia, and various other global locations. TN1205T-600B-TR SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

Part No. TN1205T-600B-TR
Manufacturer: STMicroelectronics
Category: SCRs
Description: Thyristor; 600V; 8A; 12A; 5mA; Package: Reel, tape; SMD; DPAK
Datasheet: TN1205T-600B-TR Datasheet (PDF)
Price (USD)
2500: USD 0.4566 ea
Line Total: USD 1141.5 
Availability : 7275
  
Ship by Fri. 08 Aug to Thu. 14 Aug
QtyUnit Price
2500$ 0.4566
5000$ 0.4397
7500$ 0.4309
12500$ 0.425

Availability 1547
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 445
Multiples : 1
QtyUnit Price
445$ 0.5854
489$ 0.532
505$ 0.5149
535$ 0.4869
537$ 0.4845
540$ 0.482
1000$ 0.4612


Availability 7275
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.4566
5000$ 0.4397
7500$ 0.4309
12500$ 0.425


Availability 7275
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.4566
5000$ 0.4397
7500$ 0.4309
12500$ 0.425


Availability 1482
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.994
10$ 0.8568
27$ 0.6958
74$ 0.658
500$ 0.6328


Availability 1547
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 489
Multiples : 1
QtyUnit Price
489$ 0.532
505$ 0.5149
535$ 0.4869
537$ 0.4845
540$ 0.482
1000$ 0.4612


Availability 2425
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.4855
5000$ 0.465
7500$ 0.4544
12500$ 0.4475


Availability 1892
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 201
Multiples : 1
QtyUnit Price
201$ 1.2956
211$ 1.2376
250$ 1.1879
500$ 1.101
1000$ 1.0651

   
Manufacturer
Product Category
On-State RMS Current - It RMS
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Package / Case
Packaging
Series
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TN1205T-600B-TR from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN1205T-600B-TR and other electronic components in the SCRs category and beyond.

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TN1205T-600 12 A SCR Features High current density per square mm Applications Overvoltage crowbar protection A Motor control circuits in power tools and kitchen aids K Inrush current limiting circuits A G Description DPAK This device is mounted in DPAK and intended for TN1205T-600B use in applications such as voltage regulators circuits for motorbikes, overvoltage crowbar protection, motor control circuits in power tools and capacitive discharge ignition. Table 1. Device summary I 12 A T(rms) V /V 600 V DRM RRM I 2 to 5 mA GT October 2009 Doc ID 16339 Rev 1 1/8 www.st.com 8Characteristics TN1205T-600 1 Characteristics (1) Table 2. Absolute ratings Symbol Parameter Value Unit I On-state rms current (180 C conduction angle) T = 103 C 12 A T(RMS) c I Average on-state current(180 C conduction angle) T = 103 C 8 A T(AV) c t = 8.3 ms 120 p I Non repetitive surge peak on-state current A TSM t = 10 ms 115 p 2 2 2 ITI T value for fusing t = 10 ms 66 A s p Critical rate of rise of on-state current di/dt F = 60 Hz T = 125 C 50 A/s j I = 2 x I , tr 100 ns G GT I Peak gate current t = 20 s T = 125 C 4 A GM p c P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range -40 to + 150 stg C T Operating junction temperature range -40 to + 125 j 1. T = 25 C, unless otherwise specified j (1) Table 3. Electrical characteristics Symbol Test conditions Min. Typ. Max. Unit I V = 12 V, R = 33 25mA GT D L V V = 12 V, R = 33 1.3 V GT D L V V = V R = 3.3 k T = 125 C 0.2 V GD D DRM, L j I I = 500 mA gate open 15 mA H T I I = 1.2 I 30 mA L G GT dV/dt V = 67% V gate open T = 125 C 100 V/s D DRM j Gate controlled turn on time t I = 40 A, V = V , I = 100 mA 1.2 s GT TM D DRM(MAX) GT dI /dt = 5 A/s, R = 68 G G Circuit commutated turn off time t V = 67% V , T = 125 C, I = 20 A, V = 25 V 55 s q D DRM(MAX) j TM R dI /dt = 30 A/S, dV /dt = 50 V/s, R = 100 T D GK V I = 24 A, T = 380 s 1.6 V TM TM p V Threshold voltage T = 125 C 0.85 V T0 j R Dynamyc restistance T = 125 C 30 m d j T = 25 C 5 A I j DRM V = V DRM RRM I RRM T = 125 C 2 mA j 1. T = 25 C, unless otherwise specified j 2/8 Doc ID 16339 Rev 1

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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