Product Information

TS1220-6FP

TS1220-6FP electronic component of STMicroelectronics

Datasheet
SCRs 12 A sensitive gate insulated SCR thyristor

Manufacturer: STMicroelectronics
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Price (USD)

2000: USD 0.698 ea
Line Total: USD 1396

0 - Global Stock
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
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Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 2000
Multiples : 2000

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TS1220-6FP
STMicroelectronics

2000 : USD 0.698

     
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TS1220-6FP Sensitive 12 A SCRs Datasheet - production data A Description Housed in a fullpack package, this sensitive device fits all sorts of control modes. G K It is ideal for applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances, light dimmers, inrush current-limiting circuits, capacitive discharge ignition and voltage G regulation circuits. A K Table 1: Device summary TO-220FPAB Order code Package VDRM/VRRM IGT TS1220-6FP TO-220FPAB 600 V 200 A Features On-state RMS current IT(RMS) = 12 A Low gate triggering current IGT = 200 A Peak off-state voltage V /V = 600 V DRM RRM ECOPACK 2 compliant component UL 1557 standard certified (file ref.: E81734) Applications Voltage regulators Inrush current limiting circuits Motor control circuits Capacitive discharge circuits Light dimmers August 2017 DocID030749 Rev 1 1/9 www.st.com This is information on a product in full production. Characteristics TS1220-6FP 1 Characteristics Table 2: Absolute maximum ratings (limiting values), Tj = 25 C unless otherwise specified Symbol Parameter Value Unit RMS on-state current I T = 76 C 12 A T(RMS) c (180 conduction angle) Average on-state current IT(AV) Tc = 73 C 8 A (180 conduction angle) tp = 8.3 ms 120 Non repetitive surge peak on-state current I A TSM (Tj initial = 25 C) t = 10 ms 110 p 2 2 2 I t I t value for fusing tp = 10 ms 60.5 A s Critical rate of rise of on-state current dl/dt f = 60 Hz 100 A/s I = 2 x I , tr 100 ns G GT VDRM/VRRM Repetitive peak off-state voltage Tj = 125 C 600 V I Peak gate current t = 20 s T = 125 C 4 A GM p j PG(AV) Average gate power dissipation Tj = 125 C 1 W V Maximum peak reverse gate voltage 5 V RGM Tstg Storage junction temperature range -40 to +150 C T Operating junction temperature range -40 to +125 C j TL Maximum lead temperature for soldering during 10 s 260 C V Insulation RMS voltage, 60 seconds 2000 V INS(RMS) Table 3: Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test conditions Value Unit I Max. 200 A GT V = 12 V, R = 140 D L VGT Max. 0.8 V V V = V , R = 3.3 k, R = 220 T = 125 C Min. 0.1 V GD D DRM L GK j VRG IRG = 10 A Min. 8 V I I = 50 mA, R = 1 K Max. 5 mA H T GK IL IG = 1 mA, RGK = 1 K Max. 6 mA dV/dt V = 402 V, R = 220 T = 125 C Min. 5 V/s D GK j tgt ITM = 24 A, VD = 402 V, IG = 10 mA, (dIG/dt) max = 0.2 A/s Typ. 1.9 s I = 12 A, V = 402 V, (d /dt)off = 10 A/s, TM D I tq Tj = 110 C Typ. 200 s V = 25 V, dV /dt = 1 V/s, R = 220 R D GK 2/9 DocID030749 Rev 1

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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