TS1220-6FP STMicroelectronics

TS1220-6FP electronic component of STMicroelectronics Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TS1220-6FP SCRs across the USA, India, Europe, Australia, and various other global locations. TS1220-6FP SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

Part No. TS1220-6FP
Manufacturer: STMicroelectronics
Category: SCRs
Description: SCRs 12 A sensitive gate insulated SCR thyristor
Datasheet: TS1220-6FP Datasheet (PDF)
Price (USD)
2000: USD 0.5775 ea
Line Total: USD 1155 
Availability : 0
  
QtyUnit Price
2000$ 0.5775
5000$ 0.5544
10000$ 0.55

Availability 0
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 2000
Multiples : 2000
QtyUnit Price
2000$ 0.5775
5000$ 0.5544
10000$ 0.55

   
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We are delighted to provide the TS1220-6FP from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TS1220-6FP and other electronic components in the SCRs category and beyond.

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TS1220-6FP Sensitive 12 A SCRs Datasheet - production data A Description Housed in a fullpack package, this sensitive device fits all sorts of control modes. G K It is ideal for applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances, light dimmers, inrush current-limiting circuits, capacitive discharge ignition and voltage G regulation circuits. A K Table 1: Device summary TO-220FPAB Order code Package VDRM/VRRM IGT TS1220-6FP TO-220FPAB 600 V 200 A Features On-state RMS current IT(RMS) = 12 A Low gate triggering current IGT = 200 A Peak off-state voltage V /V = 600 V DRM RRM ECOPACK 2 compliant component UL 1557 standard certified (file ref.: E81734) Applications Voltage regulators Inrush current limiting circuits Motor control circuits Capacitive discharge circuits Light dimmers August 2017 DocID030749 Rev 1 1/9 www.st.com This is information on a product in full production. Characteristics TS1220-6FP 1 Characteristics Table 2: Absolute maximum ratings (limiting values), Tj = 25 C unless otherwise specified Symbol Parameter Value Unit RMS on-state current I T = 76 C 12 A T(RMS) c (180 conduction angle) Average on-state current IT(AV) Tc = 73 C 8 A (180 conduction angle) tp = 8.3 ms 120 Non repetitive surge peak on-state current I A TSM (Tj initial = 25 C) t = 10 ms 110 p 2 2 2 I t I t value for fusing tp = 10 ms 60.5 A s Critical rate of rise of on-state current dl/dt f = 60 Hz 100 A/s I = 2 x I , tr 100 ns G GT VDRM/VRRM Repetitive peak off-state voltage Tj = 125 C 600 V I Peak gate current t = 20 s T = 125 C 4 A GM p j PG(AV) Average gate power dissipation Tj = 125 C 1 W V Maximum peak reverse gate voltage 5 V RGM Tstg Storage junction temperature range -40 to +150 C T Operating junction temperature range -40 to +125 C j TL Maximum lead temperature for soldering during 10 s 260 C V Insulation RMS voltage, 60 seconds 2000 V INS(RMS) Table 3: Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test conditions Value Unit I Max. 200 A GT V = 12 V, R = 140 D L VGT Max. 0.8 V V V = V , R = 3.3 k, R = 220 T = 125 C Min. 0.1 V GD D DRM L GK j VRG IRG = 10 A Min. 8 V I I = 50 mA, R = 1 K Max. 5 mA H T GK IL IG = 1 mA, RGK = 1 K Max. 6 mA dV/dt V = 402 V, R = 220 T = 125 C Min. 5 V/s D GK j tgt ITM = 24 A, VD = 402 V, IG = 10 mA, (dIG/dt) max = 0.2 A/s Typ. 1.9 s I = 12 A, V = 402 V, (d /dt)off = 10 A/s, TM D I tq Tj = 110 C Typ. 200 s V = 25 V, dV /dt = 1 V/s, R = 220 R D GK 2/9 DocID030749 Rev 1

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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