VNS1NV04DP-E STMicroelectronics

VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features (1) Max On-state resistance R 250m DS(ON) (1) Current limitation (typ) I 1.7A LIMH (1) Drain-Source clamp voltage V 40V CLAMP 1. Per each device. SO-8 Linear current limitation Thermal shutdown Description Short circuit protection The VNS1NV04DP-E is a device formed by two Integrated clamp monolithic OMNIFET II chips housed in a Low current drawn from input pin standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Diagnostic feedback through input pin technology: they are intended for replacement of ESD protection standard Power MOSFETs from DC up to 50KHz Direct access to the gate of the power mosfet applications. Built in thermal shutdown, linear (analog driving) current limitation and overvoltage clamp protects the chip in harsh environments. Compatible with standard power mosfet In compliance with the 2002/95/EC european Fault feedback can be detected by monitoring the directive voltage at the input pin. Table 1. Device summary Order codes Package Tube Tape and reel SO-8 VNS1NV04DP-E VNS1NV04DPTR-E September 2013 Doc ID 17344 Rev 3 1/24 www.st.com 1Contents VNS1NV04DP-E Contents 1 Block diagram and pin description . 5 2 Electrical specifications 6 2.1 Absolute maximum ratings . 6 2.2 Thermal data . 7 2.3 Electrical characteristics . 7 2.4 Electrical characteristics curves 12 3 Protection features . 16 3.1 Overvoltage clamp protection 16 3.2 Linear current limiter circuit . 16 3.3 Overtemperature and short circuit protection 16 3.4 Status feedback 16 4 Package and PCB thermal data . 17 4.1 SO-8 thermal data 17 5 Package and packing information . 20 5.1 ECOPACK packages . 20 5.2 SO-8 package information 20 5.3 SO-8 packing information . 22 6 Revision history . 23 2/24 Doc ID 17344 Rev 3