Product Information

X00619MA1AA2

X00619MA1AA2 electronic component of STMicroelectronics

Datasheet
STMicroelectronics SCRs 0.8 A sensitive Gate SCR

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

469: USD 0.0693 ea
Line Total: USD 32.5

7760 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 469  Multiples: 1
Pack Size: 1
Availability Price Quantity
988 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

X00619MA1AA2
STMicroelectronics

1 : USD 0.1172

7760 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 469
Multiples : 1

Stock Image

X00619MA1AA2
STMicroelectronics

469 : USD 0.0693
750 : USD 0.0693
2500 : USD 0.0693
10000 : USD 0.0693
30000 : USD 0.0693

988 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 62
Multiples : 1

Stock Image

X00619MA1AA2
STMicroelectronics

62 : USD 0.1196

     
Manufacturer
Product Category
Packaging
Series
Gate Trigger Current Max
Gate Trigger Voltage Max
Mounting
Operating Temp Range
Package Type
Peak Surge On-State Current Max
Peak Reverse Gate Voltage
Peak Repeat Off Current
Repetitive Peak Off-State Volt
Average On-State Current
Pin Count
Type
Off-State Voltage
Operating Temperature Classification
On State Voltage Max
Hold Current
Rad Hardened
Gate Trigger Current
Gate Trigger Voltage
Deleted
Brand
Cnhts
Hts Code
Product Type
Factory Pack Quantity :
Subcategory
Taric
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X00619 Datasheet 0.8 A - 600 V sensitive gate SCR A Features On-state rms current, I 0.8 A T(RMS) G Repetitive peak off-state voltage 600 V K Triggering gate current from 30 to 200 A ECOPACK2 compliant Applications A A G G K K Limited gate current topologies TO-92 (straight) TO-92 (preform) A Ground fault circuit interrupters Overvoltage crowbar protection in power supplies G Protection in electronic ballasts A K Capacitive discharge ignitions SOT-223 Ignitors (lighting, oven...) Description The X00619 SCR can be used as on/off function in applications where topology does not offer high current for gate triggering. This device is optimized in forward voltage drop and inrush current capabilities for reduced power losses and high reliability in harsh environments. Product status link TO92 straight leads (bulk packing) TO92 leads preform X00619 (tape and reel or ammopack packing) SOT-223 (tape and reel packing) Product summary I up to 0.8 A T(RMS) V /V DRM RRM 600 V I From 30 to 200 A GT T max. 125 C j DS6289 - Rev 4 - December 2021 www.st.com For further information contact your local STMicroelectronics sales office.X00619 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values, T = 25 C unless otherwise specified) j Symbol Parameters Value Unit T = 83 C TO-92 L I On-state RMS current (180 conduction angle) 0.8 A T(RMS) T = 107 C SOT-223 amb T = 83 C TO-92 L I Average on-state current (180 conduction angle) 0.5 A T(AV) SOT-223 T = 107 C amb t = 8.3 ms 10 Non repetitive surge peak on-state current, p I T = 25 C A TSM j T initial = 25 C j t = 10 ms 9 p 2 2 2 t = 10 ms T = 25 C I t I t value for fusing 0.4 A s p j Critical rate of rise of on-state current T = 125 C dl/dt F = 60 Hz 50 A/s j I = 2 x I , t 100 ns G GT r I t = 20 s T = 125 C Peak gate current 1 A GM p j P T = 125 C Average gate power dissipation 0.1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Parameters Value Unit Min. 30 I A GT V = 12 V, R = 140 Max. 200 D L V Max. 0.8 V GT V V = V , R = 3.3 k, R = 1 k, T = 125 C Min. 0.2 V GD D DRM L GK j V I = 10 A Min. 5 RG RG I I = 50 mA, RGK = 1 k Max. 5 mA H T I I = 1 mA, R = 1 k Max. 6 mA L G GK V = 67 % V , R = 1 k, T = 125 C dV/dt Min. 40 V/s D DRM GK j Table 3. Static electrical characteristics Symbol Test conditions Value Unit V I = 1 A, t = 380 s 25 C Max. 1.35 V TM TM p V Threshold on-state voltage 125 C Max. 0.85 V TO R Dynamic resistance 125 C Max. 245 m d I V = V , R = 1 k 25 C 1 DRM RRM GK DRM Max. A I V = V , R = 1 k 125 C 100 RRM DRM RRM GK DS6289 - Rev 4 page 2/13

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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