X0403DF 1AA2 STMicroelectronics

X04 Series SENSITIVE 4A SCRS MAIN FEATURES: Symbol Value Unit I 4A T(RMS) V /V 600 and 800 V DRM RRM I 50 to 200 A GT DESCRIPTION Thanks to highly sensitive triggering levels, the X04 SCR series is suitable for all applications where the available gate current is limited, such as capacitive discharge ignitions, motor control in TO202-3 (X04xxF) kitchen aids, overvoltage crowbar protection in low power supplies... ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit I RMS on-state current (180 conduction angle) Tl = 60C 4 A T(RMS) Tamb = 25C 1.35 IT Average on-state current (180 conduction angle) Tl = 60C 2.5 A (AV) Tamb = 25C 0.9 I Non repetitive surge peak on-state tp = 8.3 ms 33 A TSM Tj = 25C current tp = 10 ms 30 2 tp = 10 ms Tj = 25C 4.5 ItI t Value for fusing A S Critical rate of rise of on-state current dI/dt F = 60 Hz Tj = 125C 50 A/s I =2x I ,tr 100ns G GT I Peak gate current tp = 20 s Tj = 125C 1.2 A GM P Average gate power dissipation Tj = 125C 0.2 W G(AV) T Storage junction temperature range - 40to+ 150 stg C Tj Operating junction temperature range -40to+ 125 September 2000 - Ed: 3 1/5X04 Series ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol Test Conditions X04xx Unit 02 05 I MIN. 20 GT A V =12V R =140 MAX. 200 50 D L V MAX. 0.8 V GT V V =V R =3.3k R =1k Tj = 125C MIN. 0.1 V GD D DRM L GK V I =10 A MIN. 8V RG RG II =50mA R =1k MAX. 5 mA HT GK I I =1mA R =1k MIN. 6 mA L G GK dV/dt V =67%V R =1k Tj = 110C MIN. 10 15 V/s D DRM GK V I = 8A tp= 380s Tj = 25C MAX. 1.8 V TM TM V Threshold voltage Tj = 125C MAX. 0.95 V t0 R Dynamic resistance Tj = 125C MAX. 100 m d I Tj = 25C MAX. 5 A DRM V =V R =1 k DRM RRM GK I Tj = 125C 1 mA RRM THERMAL RESISTANCES Symbol Parameter Value Unit R Junction to leads (DC) C/W 15 th(j-l) R Junction to ambient (DC) 100 th(j-a) PRODUCT SELECTOR Voltage Part Number Sensitivity Package 600 V 800 V X0402MF X 200 A TO202-3 X0402NF X 200 A TO202-3 X0405MF X 50 A TO202-3 X0405NF X 50 A TO202-3 2/5