Product Information

X0403DF 1AA2

X0403DF 1AA2 electronic component of STMicroelectronics

Datasheet
SCRs 4.0 Amp 400 Volt

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1750
Multiples : 1750

Stock Image

X0403DF 1AA2
STMicroelectronics

1750 : USD 0.5214
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
Forward Voltage Drop
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Current Rating
Type
Cnhts
Hts Code
Product Type
Subcategory
Taric
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X04 Series SENSITIVE 4A SCRS MAIN FEATURES: Symbol Value Unit I 4A T(RMS) V /V 600 and 800 V DRM RRM I 50 to 200 A GT DESCRIPTION Thanks to highly sensitive triggering levels, the X04 SCR series is suitable for all applications where the available gate current is limited, such as capacitive discharge ignitions, motor control in TO202-3 (X04xxF) kitchen aids, overvoltage crowbar protection in low power supplies... ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit I RMS on-state current (180 conduction angle) Tl = 60C 4 A T(RMS) Tamb = 25C 1.35 IT Average on-state current (180 conduction angle) Tl = 60C 2.5 A (AV) Tamb = 25C 0.9 I Non repetitive surge peak on-state tp = 8.3 ms 33 A TSM Tj = 25C current tp = 10 ms 30 2 tp = 10 ms Tj = 25C 4.5 ItI t Value for fusing A S Critical rate of rise of on-state current dI/dt F = 60 Hz Tj = 125C 50 A/s I =2x I ,tr 100ns G GT I Peak gate current tp = 20 s Tj = 125C 1.2 A GM P Average gate power dissipation Tj = 125C 0.2 W G(AV) T Storage junction temperature range - 40to+ 150 stg C Tj Operating junction temperature range -40to+ 125 September 2000 - Ed: 3 1/5X04 Series ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol Test Conditions X04xx Unit 02 05 I MIN. 20 GT A V =12V R =140 MAX. 200 50 D L V MAX. 0.8 V GT V V =V R =3.3k R =1k Tj = 125C MIN. 0.1 V GD D DRM L GK V I =10 A MIN. 8V RG RG II =50mA R =1k MAX. 5 mA HT GK I I =1mA R =1k MIN. 6 mA L G GK dV/dt V =67%V R =1k Tj = 110C MIN. 10 15 V/s D DRM GK V I = 8A tp= 380s Tj = 25C MAX. 1.8 V TM TM V Threshold voltage Tj = 125C MAX. 0.95 V t0 R Dynamic resistance Tj = 125C MAX. 100 m d I Tj = 25C MAX. 5 A DRM V =V R =1 k DRM RRM GK I Tj = 125C 1 mA RRM THERMAL RESISTANCES Symbol Parameter Value Unit R Junction to leads (DC) C/W 15 th(j-l) R Junction to ambient (DC) 100 th(j-a) PRODUCT SELECTOR Voltage Part Number Sensitivity Package 600 V 800 V X0402MF X 200 A TO202-3 X0402NF X 200 A TO202-3 X0405MF X 50 A TO202-3 X0405NF X 50 A TO202-3 2/5

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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