VS-ST180SPbF Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Stud Version), 200 A FEATURES Center amplifying gate International standard case TO-209AB (TO-93) Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200 V) Compression bonded encapsulation for heavy duty operations such as severe thermal cycling TO-209AB (TO-93) Designed and qualified for industrial level Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY TYPICAL APPLICATIONS I 200 A T(AV) V /V 400 V, 800 V, 1200 V, 1600 V, 2000 V DRM RRM DC motor controls V 1.75 V TM Controlled DC power supplies I 150 mA GT AC controllers T -40 C to 125 C J Package TO-209AB (TO-93) Diode variation Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 200 A I T(AV) T 85 C C I 314 A T(RMS) 50 Hz 5000 I A TSM 60 Hz 5230 50 Hz 125 2 2 I t kA s 60 Hz 114 V /V 400 to 2000 V DRM RRM t Typical 100 s q T -40 to 125 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM REPETITIVE PEAK V , MAXIMUM I /I MAXIMUM DRM RRM RSM DRM RRM TYPE VOLTAGE AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT T = T MAXIMUM J J NUMBER CODE V V mA 04 400 500 08 800 900 VS-ST180S 12 1200 1300 30 16 1600 1700 20 2000 2100 Revision: 11-Mar-14 Document Number: 94397 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-ST180SPbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 200 A Maximum average on-state current I 180 conduction, half sine wave T(AV) at case temperature 85 C Maximum RMS on-state current I DC at 76 C case temperature 314 T(RMS) t = 10 ms 5000 No voltage reapplied t = 8.3 ms 5230 A Maximum peak, one-cycle I TSM non-repetitive surge current t = 10 ms 4200 100 % V RRM reapplied t = 8.3 ms 4400 Sinusoidal half wave, initial T = T maximum t = 10 ms J J 125 No voltage reapplied t = 8.3 ms 114 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 88 100 % V RRM reapplied t = 8.3 ms 81 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 1250 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 1.08 T(TO)1 T(AV) T(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 1.14 T(TO)2 T(AV) J J Low level value of on-state slope resistance r (16.7 % x x I < I < x I ), T = T maximum 1.18 t1 T(AV) T(AV) J J m High level value of on-state slope resistance r (I > x I ), T = T maximum 1.14 t2 T(AV) J J Maximum on-state voltage V I = 570 A, T = 125 C, t = 10 ms sine pulse 1.75 V TM pk J p Maximum holding current I 600 H T = T maximum, anode supply 12 V resistive load mA J J Maximum (typical) latching current I 1000 (300) L SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum non-repetitive rate of rise Gate drive 20 V, 20 , t 1 s r dI/dt 1000 A/s of turned-on current T = T maximum, anode voltage 80 % V J J DRM Gate current 1 A, dI /dt = 1 A/s g Typical delay time t 1.0 d V = 0.67 % V , T = 25 C d DRM J s I = 300 A, T = T maximum, dI/dt = 20 A/s, TM J J Typical turn-off time t 100 q V = 50 V, dV/dt = 20 V/s, gate 0 V 100 , t = 500 s R p BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum critical rate of rise dV/dt T = T maximum linear to 80 % rated V 500 V/s J J DRM of off-state voltage Maximum peak reverse and I , RRM T = T maximum, rated V /V applied 30 mA J J DRM RRM off-state leakage current I DRM Revision: 11-Mar-14 Document Number: 94397 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000