Product Information

Z0107NA 1AA2

Z0107NA 1AA2 electronic component of STMicroelectronics

Datasheet
TRIAC SENS GATE 800V 1A TO92-3

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.838 ea
Line Total: USD 1.84

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Warehouse 1


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

Z0107NA 1AA2
STMicroelectronics

1 : USD 1.0667
10 : USD 0.8946
100 : USD 0.6858
500 : USD 0.5422
1000 : USD 0.4338
2000 : USD 0.3931
5000 : USD 0.3836

0 - Warehouse 2


Ships to you between Mon. 13 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

Z0107NA 1AA2
STMicroelectronics

1 : USD 2.2564
10 : USD 1.0885
100 : USD 0.6068

     
Manufacturer
Product Category
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Hts Code
LoadingGif

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Z01 Datasheet Standard 1 A Triacs A2 Features On-state rms current, I 1 A T(RMS) G Repetitive peak off-state voltage, V 600 or 800 V DRM/VRRM A1 Triggering gate current, I 3 to 25 mA GT (Q1) A2 Applications A1 AC switching A2 G A1 Home appliances G A2 SOT-223 TO-92 Description A2 The Z01 series is suitable for general purpose AC switching applications. These devices are typically used in applications such as home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,... A1 G Different gate current sensitivities are available, allowing optimized performance when driven directly through microcontroller. SMBflat-3L Product status link Z01 Product summary I 1 A T(RMS) V /V 600, 800 V DRM RRM I standard 3 to 25 mA GT DS2116 - Rev 11 - May 2019 www.st.com For further information contact your local STMicroelectronics sales office.Z01 Characteristics 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameters Value Unit T = 90 C SOT-223 tab I T = 50 C RMS on-state current (full sine wave) TO-92 1 A T(RMS) L T = 107 C SMBflat-3L tab t = 20 ms F = 50 Hz 8 Non repetitive surge peak on-state current p I A TSM (full cycle, T initial = 25 C) j F = 60 Hz t = 16.7 ms 8.5 p 2 2 2 t = 10 ms 0.35 I t I t value for fusing p A s Critical rate of rise of on-state current T = 125 C dl/dt F = 120 Hz 20 A/s j I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 125 C 1 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Value Symbol Parameters Quadrant Z01 Unit 03 07 09 10 I - II - III 3 5 10 25 (1) I Max. mA GT V = 12 V, R = 30 IV 5 7 10 25 D L V All Max. 1.3 V GT V V = V , R = 3.3 k, T = 125 C GD D DRM L j All Min. 0.2 V (2) I = 50 mA I Max. 7 10 10 25 mA H T I - III - IV Max. 7 10 15 25 I I = 1.2 I mA L G GT II Max. 15 20 25 50 (2) V = 67 % V gate open, T = 110 C Min. 10 20 50 100 V/s dV/dt D DRM j (2) (dI/dt)c = 0.44 A/ms, T = 110 C Min. 0.5 1 2 5 V/s (dV/dt)c j 1. Minimum I is guaranteed at 5 % of I max. GT GT 2. For both polarities of A2 referenced to A1 DS2116 - Rev 11 page 2/16

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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