Product Information

SFUI4096J1AB1TO-I-MS-211-STD

SFUI4096J1AB1TO-I-MS-211-STD electronic component of Swissbit

Datasheet
Managed NAND 4GB IND USB FLASH DRIVE SLC IND TEMP

Manufacturer: Swissbit
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 62.9964
5 : USD 62.1324
10 : USD 60.7068
25 : USD 59.3784
50 : USD 58.1364
100 : USD 55.9116
250 : USD 53.73
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Memory Size
Sustained Read
Sustained Write
Operating Supply Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Dimensions
Product
Brand
Supply Current - Max
Product Type
Factory Pack Quantity :
Subcategory
Hts Code
LoadingGif

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Product Fact Sheet Industrial USB Flash Drive Module U-400 Series USB2.0, high speed BU: Flash Products Date: March 29, 2012 Revisio n: 1.00 File: U- 400 fact sheet R ev091.do cx Prod uct fact shee t U-400 Series (USB2.0, high speed) Industrial USB Flash Drive Module (eUSB) 1 to 16GByte Main Features USB2.0 solid state flash drive for internal 9(10)-pin USB connector terminal o Fully compliant with USB specification 2.0/3.0 (High-Speed, 480Mb/s burst) o Fully backward compliant with USB 1.1 systems (Full speed, 12Mb/s burst) o Dimension of 26.65 x 36.8mm o 2.54mm or 2.00mm connector with keyed pin9 (optional different key pins and pinouts) o Screw hole not connected (optional grounded) o Fix drive (optional removable) o LED for operation indication o Write protect switch (optional) o FAT32 preformatted o Diagnostic features with Life Time Monitoring tool support o Firmware update in field possible High performance 2.0 specification o Up to 40 IOPS write and 1700 IOPS read (4KByte transfers) o Up to 34MBytes/s sequential write and 36MBytes/s read speed Power Supply: (Low-power CMOS technology) o 3.1 to 5.5V operating voltage Optimized FW algorithms especially for high read access and long data retention applications o Patented power-off reliability technology o Near Miss ECC technology Minimize the risk of uncorrectable bit failure over the product life time. Each read command analyzes the ECC margin level and refresh data if necessary o Read Disturb Management The read commands are monitored and the content is refreshed when critical levels have occurred o Wear Leveling technology Equal wear leveling of static and dynamic data. The wear leveling assures that dynamic data as well as static data is balanced evenly across the memory. With that the maximum write endurance of the device is guaranteed o Data Care Management The interruptible background process maintain the user data for Read Disturb effects or Retention degradation due to high temperature effects -17 o UBER <10 High reliability o SLC NAND Flash with highest program erase cycles per block o Designed with sophisticated firmware architecture for industrial and netcom market especially 24/7 application like networking, base stations, infrastrucuture systems, POS/POI, medical and general boot medium use case. o The product is optimized for highest reliability and power fail safety. o Commercial and Industrial Temperature range, 0 up to 70C and -40 up to 85C Controlled BOM & PCN process RoHS, China-RoHS, REACH compatible, WEEE, CE, FCC compliant Customized options like registers, removable device, connector options, write protect switch, grounded mounting hole, conformal coating, densities, uploads, label, security controller, Swissbit AG Revision: 1.01 Industriestrasse 4 CH-9552 Bronschhofen www.swissbit.com U-400 fact sheet Rev101 Switzerland industrial swissbit.com Page 2 of 3

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

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