1N4448W

1N4148W/1N4448W/1N914BW Taiwan Semiconductor Small Signal Product 400mW High Speed SMD Switching Diode FEATURES - Fast switching device (trr<4.0ns) - Surface Mount Device Type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix means green compound (halogen-free) SOD-123F MECHANICAL DATA - Case: Flat lead SOD-123F small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260C/10s - Polarity: Indicated by cathode band - Weight: 8.85 0.5mg MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Power Dissipation P 400 mW D Reverse Voltage V 100 V R Repetitive Peak Reverse Voltage V 75 V RRM Repetitive Peak Forward Current I 300 mA FRM Forward Current I 150 mA F o Thermal Resistance (Junction to Ambient) (Note 1) R 450 JA C/W o Junction and Storage Temperature Range T , T -65 to +150 J STG C PARAMETER SYMBOL MIN MAX UNIT I =100A 100 - R Reverse Voltage V V R I =5A 75 - R Forward Voltage I =5.0mA 0.62 0.72 1N4448W, 1N914BW F V V F I =10.0mA 1N4148W -1.0 F I =100.0mA 1N4448W, 1N914BW -1.0 F V =20V -25 R nA I Reverse Leakage Current R V =75V -5.0 A R Junction Capacitance V =0, f=1.0MHz C -4.0 pF R J Reverse Recovery Time (Note 2) t -4.0 ns rr Notes 1: Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load Notes 2: Reverse Recovery Test Conditions : I =10mA, I =60mA, R =100, I =1mA F R L RR Document Number: DS S1412035 Version: I141N4148W/1N4448W/1N914BW Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig. 2 Reverse Current vs Reverse Voltage Fig.1 Typical Forward Characteristics 100 100 10 10 1 1 0. 1 0. 1 0. 01 0. 01 0. 001 0 20 40 60 80 100 120 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 Instantaneous Forward Volatge (V) Reverse Volatge (V) Fig. 4 Typical Junction Capacitance Fig. 3 Admissible Power Dissipation 6 500 5 400 4 300 3 200 2 100 1 0 0 0 20 40 60 80 100 120 140 160 02468 10 Reverse Voltage (V) Ambient Temperature (C) Fig. 5 Forward Resistance vs. Forward Current 10000 1000 100 10 1 0. 01 0. 1 1 10 100 Forward Current (mA) Document Number: DS S1412035 Version: I14 Power Dissipation (mW) Instantaneous Forward Current(A) Dynamic Forward Resistance () Reverse Current (A) Junction Capacitance (pF)