Product Information

1N4448 R0

1N4448 R0 electronic component of Taiwan Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching GENERAL PURPOSE SMALL SIGNAL DIODE
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

25: USD 0.0321 ea
Line Total: USD 0.8

0 - Global Stock
MOQ: 25  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 25
Multiples : 5

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1N4448 R0
Taiwan Semiconductor

25 : USD 0.0321
100 : USD 0.0119
500 : USD 0.0079
775 : USD 0.007
3655 : USD 0.006

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Packaging
Brand
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

1N4148 / 1N4448 / 1N914B Taiwan Semiconductor 500mW, High Speed Switching Diode FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 150 mA F(AV) High surge current capability V 100 V RRM Compliant to RoHS directive 2011/65/EU and I 2 A in accordance to WEEE 2002/96/EC FSM Halogen-free according to IEC 61249-2-21 V at I =100mA 1 V F F T 150 C APPLICATIONS J MAX Switching mode power supply (SMPS) Package DO-35 Configuration Singal dice MECHANICAL DATA Case: DO-35 Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-002 Polarity: Indicated by cathode band Weight: 109 4 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL PART NUMBER UNIT Power dissipation P 500 mW D Repetitive peak reverse voltage V 100 V RRM Repetitive peak forward current I 2 A FSM Pluse width = 1s, Square wave Non-Repetitive peak forward current I 450 mA FRM Forward current I 150 mA F(AV) Junction temperature range T -65 to +150 C J Storage temperature range T -65 to +150 C STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-ambient thermal resistance R 240 C/W JA 1 Version:I1702 1N4148 / 1N4448 / 1N914B Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT I = 5 mA, F 0.62 0.72 1N4448,1N914B T = 25C J Forward voltage I = 10 mA, F - 1.00 1N4148 V V F (1) per diode T = 25C J I = 100 mA, F - 1.00 1N4448,1N914B T = 25C J 100 - I = 100 A, T = 25C R J Reverse voltage V V R 75 - I = 5 A, T = 25C R J Reverse current - 25 V = 20 V, T = 25C nA R J rated V per I R R (2) - 5 V = 75 V, T = 25C A R J diode Junction - 4 1 MHz, V =0V C pF R J capacitance Reverse I = 10mA , V =6V, R = 100 , F R L - 4 T ns rr recovery time I = 1mA RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PACKING PACKING CODE PART NO. PACKAGE PACKING CODE SUFFIX(*) 10K / 14 Reel R0 1Nxxxx G DO-35 (Note 1&2) 5K / Box(Ammo) A0 Notes: 1.xxx is device code from 4148 to 914B *: optional available EXAMPLE PACKING CODE EXAMPLE P/N PART NO. PACKING CODE DESCRIPTION SUFFIX 1N4148 R0G 1N4148 R0 G Green compound 2 Version:I1702

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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