Product Information

1N914BW RHG

1N914BW RHG electronic component of Taiwan Semiconductor

Datasheet
Diodes - General Purpose Power Switching SOD-123F 100V 0.15A Switching Diode & Array

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1656 ea
Line Total: USD 0.17

6822 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
12548 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

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1N914BW RHG
Taiwan Semiconductor

1 : USD 0.1552
10 : USD 0.1116
100 : USD 0.0471
1000 : USD 0.0333
3000 : USD 0.0253
9000 : USD 0.023
24000 : USD 0.0207
45000 : USD 0.0184
99000 : USD 0.0173

     
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1N4148W/1N4448W/1N914BW Taiwan Semiconductor 150mA, 75V Switching Diode FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 150 mA F High surge current capability V 75 V RRM Moisture sensitivity level: level 1, per J-STD-020 I 2 A Compliance to RoHS directive 2011/65/EU and FSM in accordance to WEEE 2002/96/EC V at I =100mA 1.00 V F F Halogen-free according to IEC 61249-2-21 T Max. 150 C J APPLICATIONS Package SOD-123F Switching mode power supply (SMPS) Configuration Single die Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: SOD-123F Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 8.85 0.5mg ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT 1N4148W D1 Marking code on the device 1N4448W D2 1N914BW D3 Power dissipation P 400 mW D Reverse voltage V 100 V R Repetitive peak reverse voltage V 75 V RRM Forward current I 150 mA F Repetitive peak forward current I 300 mA FRM Non-repetitive peak forward surge current t=1.0s I 2 A FSM Junction temperature range T -65 to +150 C J Storage temperature range T -65 to +150 C STG 1 Version: K1804 1N4148W/1N4448W/1N914BW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 450 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT I = 5mA, T = 25C 0.62 0.72 1N4448W, 1N914BW F J Forward I = 10mA, T = 25C - 1.00 1N4148W F J V V F (1) voltage I = 100mA, T = 25C - 1.00 1N4448W, 1N914BW F J 100 - I =100A, T = 25C R J Reverse voltage V V R I =5A, T = 25C 75 - R J V =20V T = 25C - 25 R J nA (2) Reverse leakage current I R V =75V T = 25C - 5 A R J 1 MHz, V =0V - 4 Junction capacitance R C pF J I =10mA, I =60mA, F R - 4 Reverse recovery time t ns rr R =100, I =1mA L RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. PACKAGE PACKING 1N4148W RHG SOD-123F 3K / 7 Reel 1N4148W RH SOD-123F 3K / 7 Reel 1N4448W RHG SOD-123F 3K / 7 Reel 1N4448W RH SOD-123F 3K / 7 Reel 1N914BW RHG SOD-123F 3K / 7 Reel 1N914BW RH SOD-123F 3K / 7 Reel 2 Version: K1804

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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