Product Information

BAS316WS RR

Name: BAS316WS RR
Brand: Taiwan Semiconductor
SKU: BAS316WSRR_TaiwanSemiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

BAS316WS RR electronic component of Taiwan Semiconductor

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Datasheet

Switching Diode SOD-323F RoHS

Manufacturer: Taiwan Semiconductor

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0332 ea
Line Total: USD 0.66

0 - Global Stock

MOQ: 20 Multiples: 20
Pack Size: 20

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Global Stock Ships to you between Mon. 13 May to Thu. 16 May MOQ : 20 Multiples : 20 BAS316WS RR Taiwan Semiconductor	20 : USD 0.0332 200 : USD 0.0278 600 : USD 0.024 2000 : USD 0.0208 10000 : USD 0.0202 20000 : USD 0.02

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Additional Infomation About Product

The BAS316WS RR is a RoHS-compliant switching diode manufactured by Taiwan Semiconductor in a SOD-323F package. It is a small, low capacitance, low voltage Schottky device with a maximum reverse current of 1.5mA and a low forward voltage of 0.7V. It is suitable for application in mobile phone, PC, PDA, DVD and peripheral equipment. It is capable of operating at temperatures of up to 150°C.

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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Manufacturer Taiwan Semiconductor Taiwan Semiconductor
Product Category Diodes - General Purpose, Power, Switching Diodes - General Purpose, Power, Switching
Package / Case SOD - 323F SOD - 323F
Configuration Single Single
Recovery Time 4ns 4ns
Category Diodes-General Purpose, Power, Switching Diodes-General Purpose, Power, Switching
Rohs y y
Brand Taiwan Semiconductor(Taiwan Semicon) Taiwan Semiconductor(Taiwan Semicon)
Reverse Voltage Vr 100 V 100 V
Operating Temperature - 65 C ~ + 150 C @ (Tj) - 65 C ~ + 150 C @ (Tj)
Maximum Power Dissipation - -
Forward Voltage Vf@If 1.25 V @150 mA 1.25 V @150 mA
Reverse Leakage Current 1 uA @75V 1 uA @75V
Average Rectified Current Io 250 mA 250 mA