Product Information

BAW56 RF

BAW56 RF electronic component of Taiwan Semiconductor

Datasheet
Diode Switching 70V 0.2A 3-Pin SOT-23 T/R

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

6000: USD 0.0218 ea
Line Total: USD 130.8

0 - Global Stock
MOQ: 6000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 6000
Multiples : 3000

Stock Image

BAW56 RF
Taiwan Semiconductor

6000 : USD 0.0218

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Configuration
Vf - Forward Voltage
Packaging
Brand
Operating Temp Range
Package Type
Pin Count
Operating Temperature Classification
Rad Hardened
Rectifier Type
Peak Non-Repetitive Surge Current
Peak Rep Rev Volt
Rev Curr
Rev Recov Time
Avg Forward Curr Max
LoadingGif

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BAW56, BAV70, BAV99 Taiwan Semiconductor Small Signal Product 225mW SMD Switching Diode FEATURES - Fast switching speed - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant - Green compound (Halogen free) with suffix on packing code and prefix on date code MECHANICAL DATA - Case: SOT-23 small outline plastic package SOT-23 - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed o - High temperature soldering guaranteed: 260 C/10s - Weight: 0.008grams (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T =25 unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Power dissipation P 225 mW D Peak repetitive reverse voltage V 70 V RRM Repetitive peak forward current I 450 mA FRM Mean forward current I 200 mA O Pulse Width=1 sec 0.5 Non-repetitive peak forward I A FSM surge current Pulse Width=1 sec 2 o Thermal resistance form junction to ambient R 556 JA C/W o T , T Junction and storage temperature range - 55 to + 150 J STG C PARAMETER MIN MAX SYMBOL UNIT I = 100 A Reverse breakdown voltage V 70 - V R (BR) I = 50 mA - 1.00 F Forward voltage V V F I = 150 mA - 1.25 F V = 70 V Reverse leakage current I - 2.50 A R R BAW56, BAV70 - 2 V = 0 V, pF R Junction capacitance C J f = 1 MHz BAV99 - 1.5 pF Reverse revovery time I = I = 10 mA, R = 100 , I = 1 mA t - 6 ns F R L RR rr Version: H14 Document Number: DS S1404011BAW56, BAV70, BAV99 Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) Fig. 2 Leakage Current VS. Junction Temperature Fig. 1 Typucal Forward Characteristics 10000 1000 V =20V R Typical 100 1000 10 100 1 10 0.1 0.01 1 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 2 0 20 40 60 80 100 120 140 160 180 200 o Instantaneous Forward Voltage(V) Junction Temperature ( C) Fig. 3 Power Dissipation Derating Curve 250 200 150 100 50 0 0 25 50 75 100 125 150 o Ambient Temperature ( C) Version: H14 Document Number: DS S1404011 Instantaneous Forward Current (mA) Power Dissipation (mW) REVERSE CURRENT (nA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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