BC856A/B, BC857A/B/C, BC858A/B/C
200mW, PNP Small Signal Transistor
Small Signal Product SOT-23
Features
Epitaxial planar die construction
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix on
packing code and prefix on date code
Mechanical Data
Case : SOT- 23 small outline plastic package
Terminal : Matte tin plated, lead free, solderable
per MIL-STD-202, method 208 guaranteed
High temperature soldering guaranteed : 260C/10s
Weight : 0.008 grams (approximately)
Maximum Ratings and Electrical Characteristics
Rating at 25C ambient temperature unless otherwise specified.
Maximum Ratings
Symbol Value Units
Parameter
Power Dissipation P 200
mW
D
BC856 -80
Collector-Base Voltage V -50 V
BC857
CBO
BC858 -30
-65
BC856
V
Collector-Emitter Voltage -45 V
BC857 CEO
BC858 -30
Emitter-Base Voltage V -5
V
EBO
Collector Current I -0.1 A
C
Junction and Storage Temperature Range T , T -55 to + 150
C
J STG
Notes : 1. Valid provided that electrodes are kept at ambient temperature
Version : F14Small Signal Product
o
Electrical Characteristics ( T = 25 C unless otherwise noted )
A
Symbol Min Max Units
Parameter
BC856 -80
BC857 I = -10 AI = 0 V - V
Collector-Base Breakdown Voltage -50
C E (BR)CBO
BC858 -30
BC856
-65
BC857 I = -10mA I = 0 V - V
Collector-Emitter Breakdown Voltage -45
C B (BR)CEO
BC858 -30
I = -1 AI = 0 V
Emitter-Base Breakdown Voltage -5 - V
E C (BR)EBO
BC856 V = -70V
- -100
CB
I = 0 I
Collector Cut-off Current BC857 V = -45V - -100 nA
E CBO
CB
BC858 V = -25V
- -100
CB
V = -5V I =0 I
Emitter Cut-off Current --0.1 A
EB C EBO
BC856A, BC857A, BC858A 125 250
BC856B, BC857B, BC858B V = -5V I = -2mA h
DC Current Gain 220 475
CE C FE
BC857C, BC858C 420 800
Collector-Emitter Saturation Voltage I = -100mA I = -5mA V - -0.65 V
C B CE(sat)
I = -100mA I = -5mA V
Base-Emitter Saturation Voltage --1.1 V
C B BE(sat)
Transition Frequency V = -5V I = -10mA f= 100MHz f 100 - MHz
CE C T
Version : F14