X-On Electronics has gained recognition as a prominent supplier of BZD27C10P R3 zener diodes across the USA, India, Europe, Australia, and various other global locations. BZD27C10P R3 zener diodes are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for zener diodes, ensuring timely deliveries around the world.

BZD27C10P R3 Taiwan Semiconductor

BZD27C10P R3 electronic component of Taiwan Semiconductor
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See Product Specifications
Part No.BZD27C10P R3
Manufacturer: Taiwan Semiconductor
Category:Zener Diodes
Description: Diode Zener Single 100V 6% 1W 2-Pin Sub SMA T/R
Datasheet: BZD27C10P R3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1800: USD 0.0842 ea
Line Total: USD 151.56

Availability - 0
MOQ: 1800  Multiples: 1800
Pack Size: 1800
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 13 Jun to Wed. 19 Jun

MOQ : 1800
Multiples : 1800
1800 : USD 0.0842

   
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We are delighted to provide the BZD27C10P R3 from our Zener Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BZD27C10P R3 and other electronic components in the Zener Diodes category and beyond.

CREAT BY ART BZD27C SERIES 1.0 Watts Voltage Regulator Diodes Sub SMA RoRoHSHS Pb COCOMPLMPLIIAANNCCEE Features Silicon zener diodes Low profile surface-mount package Zener and surge current specification Low leakage current Excellent stability High temperature soldering guaranteed: 260 / 10 seconds/ .375 , (9.5mm) lead length Green compound with suffix on packing code & prefix on datecode Dimensions in inches and (millimeters) Mechanical Data Case: Sub SMA Plastic Marking Diagram Terminals: Pure tin plated, lead free XX = Specific Device Code Packaging method: refer to package code G = Green Compound Marking code: as table Y = Year Weight: 0.0196 gram WW = Work Week Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Symbol Value Unit Type Number Forward Voltage I =0.2A V 1.2 Volts F F Power Dissipation at TL=80 2.3 Ptot Watts 1.0 TA=25 (Note 1) Non-Repetitive Peak Pulse Power Dissipation P 300 Watts ZSM 100us square pulse (Note 2) Non-Repetitive Peak Pulse Power Dissipation 10/1000us waveform (BZD27C11P to BZD27C100P) P 150 Watts RSM (Note 2) Non-Repetitive Peak Pulse Power Dissipation P 10/1000us waveform (BZD27C110P to BZD27C220P) 100 Watts RSM (Note 2) Thermal Resistance Junction to Ambient Air (Note 1) R 180 JA /W Thermal Resistance Junction to Lead R 30 JL /W Operating and Storage Temperature Range T , T -65 to +175 J STG Note 1: Mounted on Cu-Pad size 5mm x 5mm ( 40um thick) Note 2: T =25 Prior to Surge J Version:Q11RATINGS AND CHARACTERISTIC CURVES (BZD27C SERIES) FIG. 1 TYPICAL FORWARD CHARACTERISTICS FIG. 2 TYP. DIODE CAPACITANCE vs REVERSE VOLTAGE 10 10000 1000 C12P TYP. VF MAX. VF 1 100 C27P C200P 10 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 REVERSE VOLTAGE FORWARD VOLTAGE (V) FIG. 4 MAXIMUM PULSE POWER DISSPATION vs FIG.3 POWER DISSIPATION vs ZENER VOLTAGE AMBIENT TEMPERATURE 3 160 2.5 140 120 2 100 1.5 80 1 60 0.5 40 20 0 0 25 50 75 100 125 150 175 0 o AMBIENT TEMPERATURE( C) 0 25 50 75 100 125 150 175 200 225 250 ZENER VOLTAGE (V) Version:Q11 INSTANTANEOUS FORWARD POWER DISSIPATION(W) CURRENT (A) TYP. JUNCTION CAPACITANCE MAX PULSE POWER (pF) DISSIPATION (W)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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