BZD27C180PW Taiwan Semiconductor

BZD27C11PW BZD27C220PW Taiwan Semiconductor 1W, 11V - 220V Zener Diode FEATURES KEY PARAMETERS Silicon zener diode PARAMETER VALUE UNIT Low profile surface-mount package V 11 - 220 V Z Zener and surge current specification Test current I 5 - 50 mA ZT Low leakage current Excellent stability P 1.0 W tot Moisture sensitivity level: level 1, per J-STD-020 T 175 C J MAX RoHS Compliant Package SOD-123W Halogen-free according to IEC 61249-2-21 Configuration Single die APPLICATIONS Voltage regulating Reference voltage Protection circuit MECHANICAL DATA Case: SOD-123W Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test SOD-123W Polarity: Indicated by cathode band Weight: 0.016g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Forward voltage I = 0.2A V 1.0 V F F T = 80C 2.3 W L Power dissipation P tot (1) T = 25C 1.0 W A Non-repetitive peak pulse power dissipation P 300 W ZSM (2) 100s square pulse Non-repetitive peak pulse power dissipation P 150 W RSM 10/1000s waveform (BZD27C11PW to BZD27C100PW) Non-repetitive peak pulse power dissipation P 100 W RSM 10/1000s waveform (BZD27C110PW to BZD27C220PW) Junction temperature T - 55 to +175 C J Storage temperature T - 55 to +175 C STG Notes: 1. Mounted on Cu-Pad size 5mm x 5mm 2. T = 25C prior to surge J 1 Version: D2203 BZD27C11PW BZD27C220PW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance R 22 C/W JL Junction-to-ambient thermal resistance R 85 C/W JA Junction-to-case thermal resistance R 24 C/W JC ORDERING INFORMATION (1) ORDERING CODE PACKAGE PACKING BZD27CxPW SOD-123W 10,000 / Tape & Reel Notes: 1. x defines voltage from 11V (BZD27C11PW) to 220V (BZD27C220PW) 2 Version: D2203