X-On Electronics has gained recognition as a prominent supplier of RABS20M M3G Bridge Rectifiers across the USA, India, Europe, Australia, and various other global locations. RABS20M M3G Bridge Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bridge Rectifiers, ensuring timely deliveries around the world.

RABS20M M3G Taiwan Semiconductor

RABS20M M3G electronic component of Taiwan Semiconductor
RABS20M M3G Taiwan Semiconductor
RABS20M M3G Bridge Rectifiers
RABS20M M3G  Semiconductors

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See Product Specifications
Part No. RABS20M M3G
Manufacturer: Taiwan Semiconductor
Category: Bridge Rectifiers
Description: Bridge Rectifiers 300ns 2A 1000V Fast Recovery Bridge Rectifier
Datasheet: RABS20M M3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 0.4158 ea
Line Total: USD 1.25 
Availability - 67
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
67
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ : 3
Multiples : 1
3 : USD 0.4158
25 : USD 0.2744
83 : USD 0.2268
228 : USD 0.2142
1000 : USD 0.2072

   
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We are delighted to provide the RABS20M M3G from our Bridge Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RABS20M M3G and other electronic components in the Bridge Rectifiers category and beyond.

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RABS20M Taiwan Semiconductor 2A, 1000V Glass Passivated Fast Recovery Bridge Rectifiers FEATURES KEY PARAMETERS Glass passivated junction PARAMETER VALUE UNIT Ideal for automated placement I 2 A F High surge current capability V UL Recognized file E-326854 RRM 1000 V RoHS Compliant I 50 A FSM Halogen-free according to IEC 61249-2-21 T 150 C J MAX Package ABS APPLICATIONS Switching mode power supply (SMPS) Configuration Quad Adapters Lighting application MECHANICAL DATA Case: ABS Molding compound meets UL 94V-0 flammability rating Moisture sensitivity level: level 1, per J-STD-020 Terminal: Pure tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1 whisker test Polarity: As marked Weight: 0.096 g (approximately) ABS ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL RABS20M UNIT Marking code on the device RA20M Repetitive peak reverse voltage V 1000 V RRM Reverse voltage, total rms value V 700 V R(RMS) Forward current I 2 A F 8.3 ms at T = 25C 50 A Surge peak forward current, single half A sine-wave superimposed on rated load I FSM 1.0 ms at T = 25C per diode 120 A A 2 2 2 I t value (of a surge on-state current) at 8.3ms I t 10 A s Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG 1 Version:A2004 RABS20M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT 39 Junction-to-lead thermal resistance R C/W JL 82 Junction-to-ambient thermal resistance R C/W JA 24 Junction-to-case thermal resistance R C/W JC Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 1.0A, T = 25C 1.06 - V F J I = 2.0A, T = 25C 1.16 1.30 V F J (1) Forward voltage per diode V F I = 1.0A, T = 125C 0.89 - V F J I = 2.0A, T = 125C 1.00 1.16 V F J T = 25C - 5 J A (2) Reverse current rated V per diode I R R T = 125C - 90 J A 15 - pF Junction Capacitance per diode 1 MHz, V =4.0V C R j IF=0.5A , IR=1.0A - 300 ns Maximum reverse recovery time per diode t rr I =0.25A RR Notes: (1) Pulse test with PW=0.3 ms (2) Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING RABS20M M3G ABS 1,000 / 7 reel RABS20M M2G ABS 5,000 / 13 reel 2 Version:A2004

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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