Product Information

RABS20M M3G

RABS20M M3G electronic component of Taiwan Semiconductor

Datasheet
Bridge Rectifiers 300ns 2A 1000V Fast Recovery Bridge Rectifier

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4082 ea
Line Total: USD 0.41

376 - Global Stock
Ships to you between
Wed. 15 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
376 - WHS 1


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1

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RABS20M M3G
Taiwan Semiconductor

1 : USD 0.4082
10 : USD 0.3461
100 : USD 0.2438
500 : USD 0.1966
1000 : USD 0.1633
2500 : USD 0.1506
10000 : USD 0.1414
20000 : USD 0.138
40000 : USD 0.1346

79 - WHS 2


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 3
Multiples : 1

Stock Image

RABS20M M3G
Taiwan Semiconductor

3 : USD 0.3679
25 : USD 0.2405
83 : USD 0.195
228 : USD 0.1846
1000 : USD 0.1768

     
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RABS20M Taiwan Semiconductor 2A, 1000V Glass Passivated Fast Recovery Bridge Rectifiers FEATURES KEY PARAMETERS Glass passivated junction PARAMETER VALUE UNIT Ideal for automated placement I 2 A F High surge current capability V UL Recognized file E-326854 RRM 1000 V RoHS Compliant I 50 A FSM Halogen-free according to IEC 61249-2-21 T 150 C J MAX Package ABS APPLICATIONS Switching mode power supply (SMPS) Configuration Quad Adapters Lighting application MECHANICAL DATA Case: ABS Molding compound meets UL 94V-0 flammability rating Moisture sensitivity level: level 1, per J-STD-020 Terminal: Pure tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1 whisker test Polarity: As marked Weight: 0.096 g (approximately) ABS ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL RABS20M UNIT Marking code on the device RA20M Repetitive peak reverse voltage V 1000 V RRM Reverse voltage, total rms value V 700 V R(RMS) Forward current I 2 A F 8.3 ms at T = 25C 50 A Surge peak forward current, single half A sine-wave superimposed on rated load I FSM 1.0 ms at T = 25C per diode 120 A A 2 2 2 I t value (of a surge on-state current) at 8.3ms I t 10 A s Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG 1 Version:A2004 RABS20M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT 39 Junction-to-lead thermal resistance R C/W JL 82 Junction-to-ambient thermal resistance R C/W JA 24 Junction-to-case thermal resistance R C/W JC Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 1.0A, T = 25C 1.06 - V F J I = 2.0A, T = 25C 1.16 1.30 V F J (1) Forward voltage per diode V F I = 1.0A, T = 125C 0.89 - V F J I = 2.0A, T = 125C 1.00 1.16 V F J T = 25C - 5 J A (2) Reverse current rated V per diode I R R T = 125C - 90 J A 15 - pF Junction Capacitance per diode 1 MHz, V =4.0V C R j IF=0.5A , IR=1.0A - 300 ns Maximum reverse recovery time per diode t rr I =0.25A RR Notes: (1) Pulse test with PW=0.3 ms (2) Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING RABS20M M3G ABS 1,000 / 7 reel RABS20M M2G ABS 5,000 / 13 reel 2 Version:A2004

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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