X-On Electronics has gained recognition as a prominent supplier of BZT52B3V6-G RHG Zener Diodes across the USA, India, Europe, Australia, and various other global locations. BZT52B3V6-G RHG Zener Diodes are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Zener Diodes, ensuring timely deliveries around the world.

BZT52B3V6-G RHG Taiwan Semiconductor

BZT52B3V6-G RHG electronic component of Taiwan Semiconductor
BZT52B3V6-G RHG Taiwan Semiconductor
BZT52B3V6-G RHG Zener Diodes
BZT52B3V6-G RHG  Semiconductors

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See Product Specifications
Part No. BZT52B3V6-G RHG
Manufacturer: Taiwan Semiconductor
Category: Zener Diodes
Description: Zener Diodes SOD-123, 410mW, 2%, Small Signal Zener Diode
Datasheet: BZT52B3V6-G RHG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2012 ea
Line Total: USD 0.2 
Availability - 4908
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4908
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 0.2012
10 : USD 0.1288
100 : USD 0.055
500 : USD 0.0506
1000 : USD 0.0462
3000 : USD 0.0407
6000 : USD 0.0385
9000 : USD 0.0319
24000 : USD 0.0297

   
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We are delighted to provide the BZT52B3V6-G RHG from our Zener Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BZT52B3V6-G RHG and other electronic components in the Zener Diodes category and beyond.

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BZT52B2V4-G - BZT52B75-G Taiwan Semiconductor 410mW 2% Zener Diodes FEATURES KEY PARAMETERS Wide zener voltage range selection: 2.4V to 75V PARAMETER VALUE UNIT V Tolerance Selection of 2% Z V 2.4-75 V Z Moisture sensitivity level: level 1, per J-STD-020 Test current I 5-2 mA ZT RoHS Compliant Halogen-free according to IEC 61249-2-21 P 410 mW tot V at I =10mA 0.9 V F F T Max. 150 C J APPLICATIONS Package SOD-123 Low voltage stabilizers or voltage references Configuration Single die Adapters On-board DC/DC converter MECHANICAL DATA Case: SOD-123 Molding compound: UL flammability classification rating 94V-0 Terminal: Matte tin plated leads, solderable per J-STD-002 Polarity: Indicated by cathode band Weight: 10.54mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Forward voltage I =10mA F V 0.9 V F Total power dissipation P 410 mW tot Junction temperature range T -55 to +150 C J Storage temperature range T -55 to +150 C STG THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 357 C/W JA 1 Version: H2002 BZT52B2V4-G - BZT52B75-G Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A TYPICAL ZENER TEST REGULAR TEST LEAKAGE TEMPERATURE TEST VOLTAGE CURRENT IMPEDANCE CURRENT CURRENT COEFFICIENT CURRENT PART MARKING NUMBER CODE Z Z ZT ZK VZ IZT IZT IZK IR VR IZTC IZTC I I ZT ZK V mA mA A V mV/C mA Min. Nom. Max. Max. Max. Max. Min. Max. BZT52B2V4-G 2WX 2.35 2.4 2.45 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52B2V7-G 2W1 2.65 2.7 2.75 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52B3V0-G 2W2 2.94 3.0 3.06 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52B3V3-G 2W3 3.23 3.3 3.37 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52B3V6-G 2W4 3.53 3.6 3.67 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52B3V9-G 2W5 3.82 3.9 3.98 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52B4V3-G 2W6 4.21 4.3 4.39 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52B4V7-G 2W7 4.61 4.7 4.79 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52B5V1-G 2W8 5.00 5.1 5.20 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52B5V6-G 2W9 5.49 5.6 5.71 5 40 400 1.0 1 2.0 -2.0 2.5 5 BZT52B6V2-G 2WA 6.08 6.2 6.32 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52B6V8-G 2WB 6.66 6.8 6.94 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52B7V5-G 2WC 7.35 7.5 7.65 5 15 80 1.0 1 5.0 2.5 5.3 5 BZT52B8V2-G 2WD 8.04 8.2 8.36 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52B9V1-G 2WE 8.92 9.1 9.28 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52B10-G 2WF 9.80 10 10.20 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52B11-G 2WG 10.78 11 11.22 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52B12-G 2WH 11.76 12 12.24 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52B13-G 2WI 12.74 13 13.26 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52B15-G 2WJ 14.70 15 15.30 5 30 200 1.0 0.1 10.5 9.2 13.0 5 BZT52B16-G 2WK 15.68 16 16.32 5 40 200 1.0 0.1 11.2 10.4 14.0 5 BZT52B18-G 2WL 17.64 18 18.36 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52B20-G 2WM 19.60 20 20.40 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52B22-G 2WN 21.56 22 22.44 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52B24-G 2WO 23.52 24 24.48 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52B27-G 2WP 26.46 27 27.54 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52B30-G 2WQ 29.40 30 30.60 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52B33-G 2WR 32.34 33 33.66 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52B36-G 2WS 35.28 36 36.72 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52B39-G 2WT 38.22 39 39.78 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52B43-G 2WU 42.14 43 43.86 2 130 350 0.5 0.1 29.4 36.4 45.2 2 BZT52B47-G 2WV 46.06 47 47.94 2 100 750 1.0 0.1 35.0 10.0 12.0 5 BZT52B51-G X1. 49.98 51 52.02 2 100 750 1.0 0.045 35.7 10.0 12.0 5 BZT52B56-G X2. 54.88 56 57.12 2 200 400 0.5 0.045 39.2 10.0 12.0 5 BZT52B62-G X3. 60.76 62 63.24 2 215 423 0.5 0.045 43.4 10.0 12.0 5 2 Version: H2002

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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