Product Information

BZT55B4V7 L1G

BZT55B4V7 L1G electronic component of Taiwan Semiconductor

Datasheet
Zener Diodes MMELF, 500mW, 2%, Small Signal Zener Diode

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3069 ea
Line Total: USD 0.31

9401 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9401 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

BZT55B4V7 L1G
Taiwan Semiconductor

1 : USD 0.21
10 : USD 0.1448
100 : USD 0.0712
1000 : USD 0.0415
2500 : USD 0.0368
10000 : USD 0.0285
25000 : USD 0.0261
50000 : USD 0.0249
100000 : USD 0.0237

     
Manufacturer
Product Category
Vz - Zener Voltage
Voltage Tolerance
Pd - Power Dissipation
Zz - Zener Impedance
Maximum Operating Temperature
Configuration
Mounting Style
Packaging
Minimum Operating Temperature
Test Current
Series
Ir - Maximum Reverse Leakage Current
Hts Code
LoadingGif

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BZT55B2V4 - BZT55B75 Taiwan Semiconductor 500mW 2% Zener Diodes FEATURES KEY PARAMETERS Wide zener voltage range selection: 2.4V to 75V PARAMETER VALUE UNIT VZ Tolerance Selection of 2% V 2.4-75 V Z Surface device type mountin Test current I 5 mA ZT Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC P 500 mW tot Halogen-free according to IEC 61249-2-21 V at I =10mA 1 V F F T Max. 175 C J APPLICATIONS Package LS34 Low voltage stabilzers or voltage references Configuration Single dice Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: Mini-MELF (Glass Seal) Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-002 Polarity: Indicated by cathode band Weight: 29 2.5mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL PART NUMBER UNIT Forward voltage I =10mA V 1 V F F Total power dissipation P 500 mW tot Junction temperature range T -65 to +175 C J Storage temperature range T -65 to +175 C STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-ambient thermal resistance R 500 C/W JA 1 Version:H1610 BZT55B2V4 - BZT55B75 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A TEST REGULAR TEST ZENER VOLTAGE LEAKAGE CURRENT CURRENT IMPEDANCE CURRENT PART V I I Z I Z I I I V Z ZT ZT ZT ZT ZK ZK ZK R R NUMBER V mA mA A V Min. Nom. Max. Max. Max. Max. BZT55B2V4 2.35 2.4 2.45 5 85 600 1.0 50 1 BZT55B2V7 2.65 2.7 2.75 5 85 600 1.0 10 1 BZT55B3V0 2.94 3.0 3.06 5 85 600 1.0 4 1 BZT55B3V3 3.23 3.3 3.37 5 85 600 1.0 2 1 BZT55B3V6 3.53 3.6 3.67 5 85 600 1.0 2 1 BZT55B3V9 3.82 3.9 3.98 5 85 600 1.0 2 1 BZT55B4V3 4.21 4.3 4.39 5 75 600 1.0 1 1 BZT55B4V7 4.61 4.7 4.79 5 60 600 1.0 0.5 1 BZT55B5V1 5.00 5.1 5.20 5 35 550 1.0 0.1 1 BZT55B5V6 5..49 5.6 5.71 5 25 450 1.0 0.1 1 BZT55B6V2 6.08 6.2 6.32 5 10 200 1.0 0.1 2 BZT55B6V8 6.66 6.8 6.94 5 8 150 1.0 0.1 3 BZT55B7V5 7.35 7.5 7.65 5 7 50 1.0 0.1 5 BZT55B8V2 8.04 8.2 8.36 5 7 50 1.0 0.1 6.2 BZT55B9V1 8.92 9.1 9.28 5 10 50 1.0 0.1 6.8 BZT55B10 9.80 10.0 10.20 5 15 70 1.0 0.1 7.5 BZT55B11 10.78 11.0 11.22 5 20 70 1.0 0.1 8.2 BZT55B12 11.76 12.0 12.24 5 20 90 1.0 0.1 9.1 BZT55B13 12.74 13.0 13.26 5 26 110 1.0 0.1 10 BZT55B15 14.70 15.0 15.30 5 30 110 1.0 0.1 11 BZT55B16 15.68 16.0 16.32 5 40 170 1.0 0.1 12 BZT55B18 17.64 18.0 18.36 5 50 170 1.0 0.1 13 BZT55B20 19.60 20.0 20.40 5 55 220 1.0 0.1 15 BZT55B22 21.56 22.0 22.44 5 55 220 1.0 0.1 16 BZT55B24 23.52 24.0 24.48 5 80 220 1.0 0.1 18 BZT55B27 26.46 27.0 27.54 5 80 220 1.0 0.1 20 BZT55B30 29.40 30.0 30.60 5 80 220 1.0 0.1 22 BZT55B33 32.34 33.0 33.66 5 80 220 1.0 0.1 24 BZT55B36 35.28 36.0 36.72 5 80 220 1.0 0.1 27 BZT55B39 38.22 39.0 39.78 2.5 90 500 0.5 0.1 28 BZT55B43 42.14 43.0 43.86 2.5 90 600 0.5 0.1 32 BZT55B47 46.06 47.0 47.94 2.5 110 700 0.5 0.1 35 BZT55B51 49.98 51.0 52.02 2.5 125 700 0.5 0.1 38 BZT55B56 54.88 56.0 57.12 2.5 135 1000 0.5 0.1 42 BZT55B62 60.76 62.0 63.24 2.5 150 1000 0.5 0.1 47 BZT55B68 66.64 68.0 69.36 2.5 160 1000 0.5 0.1 51 BZT55B75 73.50 75.0 76.50 2.5 170 1000 0.5 0.1 56 2 Version:H1610

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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