Product Information

BZT55C12

BZT55C12 electronic component of Taiwan Semiconductor

Datasheet
Taiwan Semiconductor Zener Diodes 12 Volt 500mW 5%

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.0341 ea
Line Total: USD 341

0 - Global Stock
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 10000
Multiples : 10000

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BZT55C12
Taiwan Semiconductor

10000 : USD 0.0299
25000 : USD 0.0276
50000 : USD 0.0242
100000 : USD 0.0218

     
Manufacturer
Product Category
Voltage Tolerance
Maximum Operating Temperature
Configuration
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Series
Height
Length
Package Case
Width
Brand
Ir Reverse Current
Pd Power Dissipation
Factory Pack Quantity :
Vz Zener Voltage
Zz Zener Impedance
Rohs Mouser
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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BZT55C2V4 - BZT55C75 Taiwan Semiconductor 500mW, 5% Tolerance Zener Diodes FEATURES KEY PARAMETERS Wide zener voltage range selection: 2.4V to 75V PARAMETER VALUE UNIT V tolerance selection of 5% Z V 2.4-75 V Z Compliant to RoHS directive 2011/65/EU and P 500 mW D in accordance to WEEE 2002/96/EC V at I =10mA 1 V F F T Max. 175 C J Quadro Mini- Package APPLICATIONS MELF (LS34) Configuration Single die Low voltage stabilizers or voltage references Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: Quadro Mini-MELF (LS34) Terminal: Matte tin plated leads, solderable per J-STD-002 Polarity: Indicated by cathode band Weight: 29 2.5mg ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Forward voltage I =10mA V 1 V F F Power dissipation P 500 mW D Junction temperature range T -65 to +175 C J Storage temperature range T -65 to +175 C STG THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 500 C/W JA 1 Version: H1809 BZT55C2V4 - BZT55C75 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A TEST REGULAR TEST ZENER VOLTAGE LEAKAGE CURRENT CURRENT IMPEDANCE CURRENT PART NUMBER V I I Z I Z I I I V Z ZT ZT ZT ZT ZK ZK ZK R R V mA mA A V Nom. Min. Max. Max. Max. Max. BZT55C2V4 2.4 2.28 2.56 5 85 600 1 50 1 BZT55C2V7 2.7 2.51 2.89 5 85 600 1 10 1 BZT55C3V0 3.0 2.8 3.2 5 85 600 1 4 1 BZT55C3V3 3.3 3.1 3.5 5 85 600 1 2 1 BZT55C3V6 3.6 3.4 3.8 5 85 600 1 2 1 BZT55C3V9 3.9 3.7 4.1 5 85 600 1 2 1 BZT55C4V3 4.3 4.0 4.6 5 75 600 1 1 1 BZT55C4V7 4.7 4.4 5.0 5 60 600 1 0.5 1 BZT55C5V1 5.1 4.8 5.4 5 35 550 1 0.1 1 BZT55C5V6 5.6 5.2 6.0 5 25 450 1 0.1 1 BZT55C6V2 6.2 5.8 6.6 5 10 200 1 0.1 2 BZT55C6V8 6.8 6.4 7.2 5 8 150 1 0.1 3 BZT55C7V5 7.5 7.0 7.9 5 7 50 1 0.1 5 BZT55C8V2 8.2 7.7 8.7 5 7 50 1 0.1 6.2 BZT55C9V1 9.1 8.5 9.6 5 10 50 1 0.1 6.8 BZT55C10 10 9.4 10.6 5 15 70 1 0.1 7.5 BZT55C11 11 10.4 11.6 5 20 70 1 0.1 8.2 BZT55C12 12 11.4 12.7 5 20 90 1 0.1 9.1 BZT55C13 13 12.4 14.1 5 26 110 1 0.1 10 BZT55C15 15 13.8 15.6 5 30 110 1 0.1 11 BZT55C16 16 15.3 17.1 5 40 170 1 0.1 12 BZT55C18 18 16.8 19.1 5 50 170 1 0.1 13 BZT55C20 20 18.8 21.1 5 55 220 1 0.1 15 BZT55C22 22 20.8 23.3 5 55 220 1 0.1 16 BZT55C24 24 22.8 25.6 5 80 220 1 0.1 18 BZT55C27 27 25.1 28.9 5 80 220 1 0.1 20 BZT55C30 30 28 32 5 80 220 1 0.1 22 BZT55C33 33 31 35 5 80 220 1 0.1 24 BZT55C36 36 34 38 5 80 220 1 0.1 27 BZT55C39 39 37 41 2.5 90 500 0.5 0.1 28 BZT55C43 43 40 46 2.5 90 600 0.5 0.1 32 BZT55C47 47 44 50 2.5 110 700 0.5 0.1 35 BZT55C51 51 48 54 2.5 125 700 0.5 0.1 38 BZT55C56 56 52 60 2.5 135 1,000 0.5 0.1 42 BZT55C62 62 58 66 2.5 150 1,000 0.5 0.1 47 BZT55C68 68 64 72 2.5 160 1,000 0.5 0.1 51 BZT55C75 75 70 79 2.5 170 1,000 0.5 0.1 56 2 Version: H1809

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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