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BZV55B2V4 L1G

BZV55B2V4 L1G electronic component of Taiwan Semiconductor

Datasheet
Zener Diodes MMELF 500mW 2% Small Signal Zener Diode

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.0306 ea
Line Total: USD 306

0 - Global Stock
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 10000
Multiples : 10000

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BZV55B2V4 L1G
Taiwan Semiconductor

10000 : USD 0.0306
25000 : USD 0.0282
50000 : USD 0.0247

     
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BZV55B2V4 - BZV55B75 Taiwan Semiconductor 500mW, 2% Tolerance Zener Diodes FEATURES KEY PARAMETERS Wide zener voltage range selection: 2.4V to 75V PARAMETER VALUE UNIT V tolerance selection of 2% Z V 2.4-75 V Z Compliant to RoHS directive 2011/65/EU and Test current I 5 mA ZT in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 P 500 mW D VF at I =100mA 1 V F APPLICATIONS T Max. 175 C J Low voltage stabilizers or voltage references Package Mini-MELF Adapters Configuration Single die Lighting application On-board DC/DC converter MECHANICAL DATA Case: Mini-MELF Terminal: Matte tin plated leads, solderable per J-STD-002 Polarity: Indicated by cathode band Weight: 0.03g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Forward voltage I =100mA V 1 V F F Power dissipation P 500 mW D Junction temperature range T -65 to +175 C J Storage temperature range T -65 to +175 C STG THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 300 C/W JA 1 Version: F1804 BZV55B2V4 - BZV55B75 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A TEST REGULAR TEST ZENER VOLTAGE LEAKAGE CURRENT CURRENT IMPEDANCE CURRENT PART NUMBER V I I Z I Z I I I V Z ZT ZT ZT ZT ZK ZK ZK R R V mA mA A V Min. Nom. Max. Max. Max. Max. BZV55B2V4 2.35 2.4 2.45 5 85 600 1.0 50 1.0 BZV55B2V7 2.65 2.7 2.75 5 85 600 1.0 10 1.0 BZV55B3V0 2.94 3.0 3.06 5 85 600 1.0 4 1.0 BZV55B3V3 3.23 3.3 3.37 5 85 600 1.0 2 1.0 BZV55B3V6 3.53 3.6 3.67 5 85 600 1.0 2 1.0 BZV55B3V9 3.82 3.9 3.98 5 85 600 1.0 2 1.0 BZV55B4V3 4.21 4.3 4.39 5 75 600 1.0 1 1.0 BZV55B4V7 4.61 4.7 4.79 5 60 600 1.0 0.5 1.0 BZV55B5V1 5.00 5.1 5.20 5 35 550 1.0 0.1 1.0 BZV55B5V6 5.49 5.6 5.71 5 25 450 1.0 0.1 1.0 BZV55B6V2 6.08 6.2 6.32 5 10 200 1.0 0.1 2.0 BZV55B6V8 6.66 6.8 6.94 5 8 150 1.0 0.1 3.0 BZV55B7V5 7.35 7.5 7.65 5 7 50 1.0 0.1 5.0 BZV55B8V2 8.04 8.2 8.36 5 7 50 1.0 0.1 6.2 BZV55B9V1 8.92 9.1 9.28 5 10 50 1.0 0.1 6.8 BZV55B10 9.80 10 10.20 5 15 70 1.0 0.1 7.5 BZV55B11 10.78 11 11.22 5 20 70 1.0 0.1 8.2 BZV55B12 11.76 12 12.24 5 20 90 1.0 0.1 9.1 BZV55B13 12.74 13 13.26 5 26 110 1.0 0.1 10 BZV55B15 14.70 15 15.30 5 30 110 1.0 0.1 11 BZV55B16 15.68 16 16.32 5 40 170 1.0 0.1 12 BZV55B18 17.64 18 18.36 5 50 170 1.0 0.1 13 BZV55B20 19.60 20 20.40 5 55 220 1.0 0.1 15 BZV55B22 21.56 22 22.44 5 55 220 1.0 0.1 16 BZV55B24 23.52 24 24.48 5 80 220 1.0 0.1 18 BZV55B27 26.46 27 27.54 5 80 220 1.0 0.1 20 BZV55B30 29.40 30 30.60 5 80 220 1.0 0.1 22 BZV55B33 32.34 33 33.66 5 80 220 1.0 0.1 24 BZV55B36 35.28 36 36.72 5 80 220 1.0 0.1 27 BZV55B39 38.22 39 39.78 2.5 90 500 0.5 0.1 28 BZV55B43 42.14 43 43.86 2.5 90 600 0.5 0.1 32 BZV55B47 46.06 47 47.94 2.5 110 700 0.5 0.1 35 BZV55B51 49.98 51 52.02 2.5 125 700 0.5 0.1 38 BZV55B56 54.88 56 57.12 2.5 135 1000 0.5 0.1 42 BZV55B62 60.76 62 63.24 2.5 150 1000 0.5 0.1 47 BZV55B68 66.64 68 69.36 2.5 160 1000 0.5 0.1 51 BZV55B75 73.50 75 76.50 2.5 170 1000 0.5 0.1 56 2 Version: F1804

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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