ES1BAL - ES1JAL Taiwan Semiconductor 1A, 100V-600V Surface Mount Super Fast Rectifiers FEATURES KEY PARAMETERS Glass passivated junction chip PARAMETER VALUE UNIT Ideal for automated placement I 1 A F(AV) Low power loss, high efficiency V 100-600 V RRM Low profile package RoHS Compliant I 30 A FSM Halogen-free according to IEC 61249-2-21 T 150 C J MAX Package Thin SMA APPLICATIONS Configuration Single Die Freewheeling application Switching mode converters and inverters, computer and telecommunication. MECHANICAL DATA Case: Thin SMA Molding compound meets UL 94V-0 flammability rating Moisture sensitivity level: level 1, per J-STD-020 Terminal: Pure tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.029 g (approximately) Thin SMA ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL ES1BAL ES1DAL ES1GAL ES1JAL UNIT Marking code on the device ES1BAL ES1DAL ES1GAL ES1JAL Repetitive peak reverse voltage V 100 200 400 600 V RRM Reverse voltage, total rms value V 70 140 280 420 V R(RMS) Forward current I 1 A F(AV) Surge peak forward 8.3ms at T = 25C 30 A A current single half sine- I FSM wave superimposed on 1.0ms at T = 25C 60 A A rated load per diode Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG 1 Version:B2004 ES1BAL - ES1JAL Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT 28 Junction-to-lead thermal resistance R C/W JL 67 Junction-to-ambient thermal resistance R C/W JA 20 Junction-to-case thermal resistance R C/W JC Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 0.5A, T = 25C 0.80 - V F J I = 1.0A, T = 25C 0.85 0.95 V ES1BAL F J ES1DAL I = 0.5A, T = 125C 0.58 - V F J I = 1.0A, T = 125C 0.71 0.81 V F J I = 0.5A, T = 25C 0.86 - V F J I = 1.0A, T = 25C 0.93 1.30 V F J (1) Forward voltage per diode ES1GAL V F I = 0.5A, T = 125C 0.69 - V F J I = 1.0A, T = 125C 0.77 0.89 V F J I = 0.5A, T = 25C 1.04 - V F J I = 1.0A, T = 25C 1.15 1.70 V F J ES1JAL I = 0.5A, T = 125C 0.80 - V F J I = 1.0A, T = 125C 0.93 1.06 V F J T = 25C A - 1 J (2) Reverse current rated V per diode I R R T = 125C A J - 20 I =0.5A,I =1.0A, F R Reverse recovery time t - 35 ns rr Irr=0.25A ES1BAL 18 - pF ES1DAL Junction capacitance per diode 1 MHz, V =4.0V C R J ES1GAL 16 - pF ES1JAL 15 - pF Notes: (1) Pulse test with PW=0.3 ms (2) Pulse test with PW=30 ms ORDERING INFORMATION (1) ORDERING CODE PACKAGE PACKING ES1xAL M3G Thin SMA 3,500 / 7 reel ES1xAL M2G Thin SMA 14,000 / 13 reel Notes: (1) x defines voltage from 100V(ES1BAL) to 600V(ES1JAL) 2 Version:B2004