Product Information

ESH2DHR5G

ESH2DHR5G electronic component of Taiwan Semiconductor

Datasheet
Rectifiers 25ns 2A 200V UlFst Recov Rectifier

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9207 ea
Line Total: USD 0.92

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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ESH2DHR5G
Taiwan Semiconductor

1 : USD 0.6727
10 : USD 0.5747
100 : USD 0.4044
500 : USD 0.326
1000 : USD 0.272
3400 : USD 0.25
6800 : USD 0.2353
23800 : USD 0.2304
47600 : USD 0.2242

     
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ESH2B - ESH2D Taiwan Semiconductor 2A, 100V - 200V Surface Mount Ultra Fast Rectifier FEATURES KEY PARAMETERS Glass passivated junction chip PARAMETER VALUE UNIT Ideal for automated placement I 2 A F(AV) Low profile package V 100 - 200 V RRM Ultra fast recovery time for high efficiency Compliant to RoHS Directive 2011/65/EU and I 60 A FSM in accordance to WEEE 2002/96/EC T 175 C J MAX Halogen-free according to IEC 61249-2-21 Package DO-214AA (SMB) Configuration Single Die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Part no. with suffix H means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.09 g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL ESH2B ESH2C ESH2D UNIT Marking code on the device ESH2B ESH2C ESH2D Repetitive peak reverse voltage V 100 150 200 V RRM Reverse voltage, total rms value V 70 105 140 V R(RMS) Maximum DC blocking voltage V 100 150 200 V DC Forward current I 2 A F(AV) Surge peak forward current, 8.3 ms single half I 60 A FSM sine-wave superimposed on rated load per diode Junction temperature T - 55 to +175 C J Storage temperature T - 55 to +175 C STG 1 Version:I1706 ESH2B - ESH2D Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-lead thermal resistance R 20 C/W JL Junction-to-ambient thermal resistance R 75 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT (1) - 0.9 Forward voltage per diode I = 2A,T = 25C V V F J F - 2 T = 25C A J (2) Reverse current rated V per diode I R R - 50 T = 125C A J 25 - pF Junction capacitance 1 MHz, V =4.0V C R J I =0.5A ,I =1.0A F R Reverse recovery time t - 20 ns rr I =0.25A RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. PACKING PACKING CODE PART NO. PACKAGE PACKING SUFFIX CODE SUFFIX(*) R5 SMB 850 / 7 Plastic reel ESH2x R4 G SMB 3,000 / 13 Paper reel H (Note 1) M4 SMB 3,000 / 13 Plastic reel Note: 1. defines voltage from 100V (ESH2B) to 200V (ESH2D) *: Optional available EXAMPLE P/N PART NO. PACKING PACKING CODE EXAMPLE P/N PART NO. DESCRIPTION SUFFIX CODE SUFFIX AEC-Q101 qualified ESH2DHR5G ESH2D H R5 G Green compound 2 Version:I1706

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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