Product Information

FR105G

FR105G electronic component of Taiwan Semiconductor

Datasheet
Rectifiers 1A 600V GLASS PASSIVATED

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.5765 ea
Line Total: USD 2.88

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 5
Multiples : 1

Stock Image

FR105G
Taiwan Semiconductor

5 : USD 0.5765
10 : USD 0.4081
100 : USD 0.1834
500 : USD 0.1529
1000 : USD 0.1217
5000 : USD 0.1154

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Length
Product
Width
Brand
Factory Pack Quantity :
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CREAT BY ART FR101G - FR107G 1.0AMP Glass Passivated Fast Recovery Rectifiers DO-41 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix on packing code & prefix on datecode Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: Color band denotes cathode end High temperature soldering guaranteed: 260/10s Weight: 0.34 grams Ordering Information (example) INNER Packing code Packing code Part No. Package Packing TAPE (Green) FR101G DO-41 3K / AMMO box 52mm A0 A0G Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. FR FR FR FR FR FR FR Symbol Units Parameter 101G 102G 103G 104G 105G 106G 107G Maximum Recurrent Peak Reverse Voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS Voltage V 35 70 140 280 420 560 700 V RMS Maximum DC Blocking Voltage V 50 100 200 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 1 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave I 30 A FSM Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 1.3 V F 1 A Maximum DC Reverse Current at T =25 5 uA A I R Rated DC Blocking Voltage T =125 100 A uA Maximum Reverse Recovery Time (Note 2) Trr 150 250 500 nS Typical Junction Capacitance (Note 3) 10 Cj pF O Typical Thermal Resistance R 70 JA C/W O Operating Temperature Range T - 55 to + 150 J C O Storage Temperature Range T - 55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:E13RATINGS AND CHARACTERISTIC CURVES (FR101G THRU FR107G) FIG.1- MAXIMUM FORWARD CURRENT DERATING FIG. 2- TYPICAL REVERSE CHARACTERISTICS CURVE 1.2 5 1000 RESISTIVE OR 1 INDUCTIVE LOAD 100 0.7 5 TA=125 0.5 10 0.2 5 TA=75 0 0 255075 100 125 150 1 o AMBIENT TEMPERATURE ( C) TA=25 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 0. 1 0 20 40 60 80 100 120 140 40 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 30 TA=25 FIG. 5- TYPICAL FORWARD CHARACTERISTICS 20 10 8.3mS Single Half Sine Wave 10 JEDEC Method 0 1 10 100 NUMBER OF CYCLES AT 60 Hz FIG. 4- TYPICAL JUNCTION CAPACITANCE 100 1 TA=25 10 TA=25 Pulse Width=300us 1% Duty Cycle 0. 1 1 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1 10 100 FORWARD VOLTAGE (V) REVERSE VOLTAGE (V) Version:E13 AVERAGE FORWARD CURRENT (A) JUNCTION CAPACITANCE (pF) PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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