Product Information

FR207 R0

FR207 R0 electronic component of Taiwan Semiconductor

Datasheet
Diode Switching 600V 2A 2-Pin DO-15 T/R

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3500: USD 0.0428 ea
Line Total: USD 149.8

0 - Global Stock
MOQ: 3500  Multiples: 3500
Pack Size: 3500
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3500
Multiples : 3500

Stock Image

FR207 R0
Taiwan Semiconductor

3500 : USD 0.0428

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Factory Pack Quantity :
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CREAT BY ART FR201G - FR207G 2.0AMPS Glass Passivated Fast Recovery Rectifiers DO-15 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix on packing code & prefix on datecode Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: Color band denotes cathode end High temperature soldering guaranteed: 260/10s Mounting position: Any Weight: 0.40 grams Ordering Information (example) INNER Packing code Packing code Part No. Package Packing TAPE (Green) 52mm A0 A0G FR201G DO-15 1.5K / AMMO box Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. FR FR FR FR FR FR FR Symbol Units Parameter 201G 202G 203G 204G 205G 206G 207G Maximum Recurrnet Peak Reverse Voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS Voltage V 35 70 140 280 420 560 700 V RMS Maximum DC Blocking Voltage V 50 100 200 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 2 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave I 55 A FSM Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 1.3 V F 2 A Maximum DC Reverse Current at T =25 5 uA A I R Rated DC Blocking Voltage T =125 100 uA A Maximum Reverse Recovery Time (Note 2) 150 500 Trr 250 nS Typical Junction Capacitance (Note 3) Cj 20 pF O Typical Thermal Resistance R 60 JA C/W O Operating Temperature Range T - 55 to + 150 J C O Storage Temperature Range T - 55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:E13RATINGS AND CHARACTERISTIC CURVES (FR201G THRU FR207G) FIG.1- MAXIMUM FORWARD CURRENT DERATING FIG. 2- TYPICAL REVERSE CHARACTERISTICS CURVE 3 1000 2.5 2 100 TA=125 1.5 1 RESISTIVE OR INDUCTIVE LOAD 0.5 10 TA=75 0 0 25 50 75 100 12 5 150 o AMBIENT TEMPERATURE ( C) 1 FIG. 3- MAXIMUM NON-REPETITIVE PEAK FORWARD TA=25 SURGE CURRENT 60 0. 1 50 TA=25 0 20 40 60 80 100 120 140 40 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 30 FIG. 5- TYPICAL FORWARD CHARACTERISTICS 20 10 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz FIG. 4- TYPICAL JUNCTION CAPACITANCE 100 8.3mS Single Half Sine Wave JEDEC Method 1 TA=25 10 TA=25 Pulse Width=300us 1% Duty Cycle 0. 1 1 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1 10 100 FORWARD VOLTAGE (V) REVERSE VOLTAGE (V) Version:E13 AVERAGE FORWARD CURRENT (A) PEAK FORWARD SURGE JUNCTION CAPACITANCE (pF) CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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