HERA804G Taiwan Semiconductor

HERA801G HERA808G Taiwan Semiconductor 8A, 50V - 1000V High Efficient Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified available PARAMETER VALUE UNIT Glass passivated chip junction I 8 A F High efficiency, Low V F V 50 - 1000 V RRM High current capability High reliability I 150 A FSM High surge current capability T 150 C J MAX RoHS Compliant Package TO-220AC Halogen-free according to IEC 61249-2-21 Configuration Single die APPLICATIONS DC to DC converter Switching mode converters and inverters Freewheeling application MECHANICAL DATA Case: TO-220AC Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N m maximum Meet JESD 201 class 2 whisker test TO-220AC Polarity: As marked Weight: 1.80g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A HERA HERA HERA HERA HERA HERA HERA HERA PARAMETER SYMBOL UNIT 801G 802G 803G 804G 805G 806G 807G 808G Marking code on the HERA HERA HERA HERA HERA HERA HERA HERA device 801G 802G 803G 804G 805G 806G 807G 808G Repetitive peak reverse V 50 100 200 300 400 600 800 1000 V RRM voltage Reverse voltage, total V 35 70 140 210 280 420 560 700 V R(RMS) rms value Forward current I 8 A F Surge peak forward current 8.3ms single half I 150 A FSM sine wave superimposed on rated load Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG 1 Version: J2103 HERA801G HERA808G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case resistance R 2 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT HERA801G HERA802G - 1.0 V HERA803G HERA804G (1) Forward voltage I = 8A, T = 25C V F J F HERA805G - 1.3 V HERA806G HERA807G - 1.7 V HERA808G T = 25C - 10 A J (2) Reverse current rated V I R R T = 125C - 400 A J HERA801G HERA802G HERA803G 65 - pF HERA804G Junction capacitance 1MHz, V = 4.0V C R J HERA805G HERA806G HERA807G 55 - pF HERA808G HERA801G HERA802G HERA803G - 50 ns HERA804G IF = 0.5A, IR = 1.0A Reverse recovery time t rr HERA805G Irr = 0.25A HERA806G HERA807G - 80 ns HERA808G Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1)(2) ORDERING CODE PACKAGE PACKING HERA8xG TO-220AC 50 / Tube TO-220AC HERA8xGH 50 / Tube Notes: 1. x defines voltage from 50V(HERA801G) to 1000V(HERA808G) 2. H means AEC-Q101 qualified 2 Version: J2103