X-On Electronics has gained recognition as a prominent supplier of MBR735HC0 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MBR735HC0 Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

MBR735HC0 Taiwan Semiconductor

MBR735HC0 electronic component of Taiwan Semiconductor
MBR735HC0 Taiwan Semiconductor
MBR735HC0 Schottky Diodes & Rectifiers
MBR735HC0  Semiconductors

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See Product Specifications
Part No. MBR735HC0
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 7A,35V,SINGLE SCHOTTKY RECTIFIER
Datasheet: MBR735HC0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.3738 ea
Line Total: USD 373.8 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Tue. 24 Jun to Thu. 26 Jun
MOQ : 1000
Multiples : 1000
1000 : USD 0.3738
2500 : USD 0.3428
4000 : USD 0.3169
12000 : USD 0.3066

   
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RoHS - XON
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We are delighted to provide the MBR735HC0 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBR735HC0 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBR735 thru MBR7150 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-220AC MECHANICAL DATA Case: TO-220AC Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix on packing code - halogen-free Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.85 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL UNIT 735 745 750 760 790 7100 7150 V Maximum repetitive peak reverse voltage 35 45 50 60 90 100 150 V RRM Maximum RMS voltage V 24 31 35 42 63 70 105 V RMS Maximum DC blocking voltage V 35 45 50 60 90 100 150 V DC Maximum average forward rectified current I 7.5 A F(AV) Peak repetitive forward current I 15 A FRM (Rated VR, Square Wave, 20KHz) Peak forward surge current, 8.3 ms single half sine-wave I 150 A FSM superimposed on rated load Peak repetitive reverse surge current (Note 1) I 1 0.5 A RRM Maximum instantaneous forward voltage (Note 2) I =7.5 A, T =25 - 0.75 0.92 0.95 F J I =7.5 A, T =125 V 0.57 0.65 0.82 V F J F 0.92 I =15 A, T =25 F J 0.84 -- - I =15 A, T =125 F J 0.72 -- - 0.1 Maximum reverse current rated VR T =25 J I mA R T =125 J 15 10 5 Voltage rate of change (Rated V ) 10000 dV/dt V/s R R JC 5 O Typical thermal resistance C/W 15 R JA O Operating junction temperature range T - 55 to +150 J C O Storage temperature range T - 55 to +175 STG C Note 1: tp = 2.0 s, 1.0KHz Note 2: Pulse test with PW=300s, 1% duty cycle Document Number: DS D1308048 Version: J13MBR735 thru MBR7150 Taiwan Semiconductor ORDERING INFORMATION AEC-Q101 GREEN COMPOUND PACKING CODE PACKAGE PACKING PART NO. QUALIFIED CODE MBR7xx Prefix C0 Suffix TO-220AC 50 / Tube (Note 1) Note 1:x defines voltage from 35V (MBR735) to 150V (MBR7150) EXAMPLE AEC-Q101 GREEN COMPOUND PREFERRED P/N PACKING CODE DESCRIPTION PART NO. QUALIFIED CODE MBR760 C0 C0 MBR760 MBR760 C0G MBR760 C0 G Green compound MBR760HC0 H C0 AEC-Q101 qualified MBR760 RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG.1- FORWARD CURRENT DERATING CURVE FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 10 175 8.3ms Single Half Sine Wave JEDEC Method 150 8 125 6 RESISTIVE OR 100 INDUCTIVELOAD 4 WITH HEATSINK 75 2 MBR735-MBR745 50 MBR750-MBR7150 0 25 0 50 100 150 1 10 100 o CASE TEMPERATURE ( C) NUMBER OF CYCLES AT 60 Hz FIG. 4- TYPICAL REVERSE CHARACTERISTICS FIG. 3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 100 MBR735-745 MBR750-7150 Pulse Width=300s 1% Duty Cycle 10 10 TJ=125 TJ=125 1 1 TJ=25 0. 1 TJ=75 0. 1 MBR735-MBR745 0. 01 MBR750-MBR760 MBR790-MBR7150 TJ=25 0. 001 0. 01 0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 0. 7 0. 8 0. 9 1 1. 1 1. 2 0 20 40 60 80 100 120 140 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS D1308048 Version: J13 AVERAGE FORWARD A INSTANTANEOUS FORWARD CURRENT (A) CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) PEAK FORWARD SURGE CURRENT (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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